Search results for "SiC MOSFET"

National Semiconductor Corp. a présenté aujourd'hui les premiers contrôleurs PWM (modulation de largeur d'impulsions) du marché intégrant leurs quatre drivers de MOSFET de pont aux primaires. Les LM5045 et LM5046 sont bien adaptés pour fournir un rendement et une densité de puissance supérieurs dans les modules quart de brique ou huitième de brique utilisés dans certains applications d'infrastructure de transmissions haute tension.

National Semiconductor announced the industry’s first LED driver with dynamic headroom control and multiple outputs for high-power applications that accurately and efficiently drives up to four strings of LEDs. The LM3464, a member of National’s PowerWise® energy-efficient product family, maximizes system efficiency and reduces system complexity and cost in LED-intensive applications such as industrial, street and automotive lighting.

National Semiconductor has introduced four new high-voltage, non-synchronous buck controllers that include a comprehensive feature set of high input voltage range, high-performance pulse width modulation (PWM) control and reduced electromagnetic interference (EMI).

National Semiconductor Corp. today announced the industry’s first system monitoring, protection and control integrated circuit with on-chip power management bus (PMBus) support. The LM25066 provides designers of blade servers, storage networking systems, routers/switches and modular subsystems with a solution that improves system reliability and reduces operating expenses in data centers.

Atmel LED driver family offers intelligent control for backlighting and solid state lighting markets; Combination of new LED drivers with Atmel AVR and ARM-based MCUs offer optimal power efficiency, flexibility networking ability and lower BOM.

ROHM Semiconductor has announced the industry’s first mass production of SiC power modules (1200V/100A rated) entirely consisting of SiC power elements and enabling high frequency operation above 100kHz. Thus, the company is now able to offer industry-leading SiC devices such as Schottky barrier diodes and MOSFETs as well as a complete SiC module solution.

ROHM has revealed the development of a 2nd generation high-voltage (1200V) SiC power MOSFET designed for inverters and converters in power conditioners for industrial devices and photovoltaic power generation. Features include low power loss and high reliability, reducing power consumption and enabling support for smaller peripheral components.

ROHM Semiconductor will present its latest products and technologies at PCIM, the leading trade fair for power electronics in Nuremberg, from May 8 to 10 (Hall 12, Booth 601). Based on the most recent developments in the R/D centers of ROHM and LAPIS and the expertise in the design and manufacturing of state-of-the-art power management, the products address the increasing demand for more energy efficiency, miniaturization, reliability, reduced c...

Diodes Incorporated has announced an expansion of its power MOSFET product range with the introduction of new devices suitable for load and switching functions in a variety of consumer, communication, computing and industrial applications. Covering both its Diodes and Zetex product lines, the additions include twenty seven 30V logic level and nine 20V low threshold N, P and complementary MOSFETs in a choice of industry standard packages.

Diodes Incorporated has extended its MOSFET offering with the introduction of 15 devices tailored to the needs of LCD TV and monitor backlighting. Provided in industry standard TO252 and SO8 packaging, the MOSFETs deliver the high power handling and fast switching required by high efficiency CCFL drive architectures.