Search results for "SiC MOSFET"

Vishay Intertechnology, Inc. today released three new 500-V, 12-A n-channel power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10-V gate drive, and an improved gate charge of 48 nC in TO-220, TO-220 FULLPAK, and D2PAK (TO-263) packages.

To assist customers in understanding how co-packaging high- and low-side MOSFETs in one compact device can save on space and costs for dc-to-dc converters, Vishay Intertechnology, Inc. (NYSE: VSH) has added a new streaming video to its website (http://www.vishay.com) highlighting the company's SiZ700DT PowerPAIR® dual asymmetric power MOSFET solution.

Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled the industry's smallest and thinnest n-channel chipscale power MOSFET and the first with a sub-1-mm2 outline. The 20-V MICRO FOOT® Si8800EDB combines an ultra-small 0.8-mm by 0.8 mm outline with a height of 0.357 mm to save space in portable electronics.

Vishay Intertechnology introduced a new dual 12-V p-channel TrenchFET Gen III power MOSFET with the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2-mm by 2-mm footprint area.

Vishay announced a new device in the microBUCK family of integrated synchronous buck regulators. The 6-A SiC414 is a dc-to-dc converter solution featuring an advanced controller IC with gate drivers, two PWM-optimized n-channel MOSFETs (high and low side), and a bootstrap switch in a standalone buck regulator configuration in a space-saving MLPQ 4-mm by 4-mm 28-pin package.

Vishay unveiled the first 30-V p-channel TrenchFET Gen III power MOSFET in the PowerPAK 1212-8 package. The device features the industry's lowest on-resistance for a p-channel MOSFET with this voltage rating in the 3.3-mm by 3.3-mm footprint area.

Vishay has introduced the first asymmetric dual TrenchFET power MOSFET in the PowerPAIR 6 mm by 3.7 mm package to utilize TrenchFET Gen III technology, reducing on-resistance by 43 % when compared to previous-generation devices, while offering higher maximum current and enabling increased efficiency. Offering the industry's lowest on-resistance for this device type, the SiZ710DT combines a low- and high-side MOSFET in one compact device, saving s...

Vishay has introduced a new 8 V p-channel TrenchFET power MOSFET featuring the industry's lowest on-resistance for a p-channel device in the 1.6 mm by 1.6 mm footprint area with a profile under 0.8 mm. In addition, the SiB437EDKT is the only such device to offer an on-resistance rating down to 1.2 V.

Vishay Intertechnology is expanding its PowerPAIR family of dual asymmetric power MOSFETs for low-voltage DC/DC converter applications with new devices that expand the series' voltage and package footprint options. The new devices make Vishay the only supplier to offer 3 mm by 3 mm, 6 mm by 3.7 mm, and 6 mm by 5 mm PowerPAIR form factors.

ON Semiconductor introduced a new family of high efficiency 2 to 4A integrated synchronous regulators for consumer electronics applications such as set top boxes, DVD/hard disk drives, LCD monitors/TVs, speakerphones, cable modems, and telecom/datacom equipment.