Search results for "SiC MOSFET"

The AUIRF7640S2, AUIRF7647S2 and AUIRF7675M2 devices expand IR’s portfolio of automotive DirectFET®2 power MOSFETs for Class D Audio systems, and are optimized with low gate charge (Qg) to improve Total Harmonic Distortion (THD) and efficiency, while low Diode Reverse Recovery Charge (Qrr) further improves THD and lowers EMI.

International Rectifier has introduced a family of 25 V and 30 V devices featuring IR’s latest HEXFET® MOSFET silicon in a new performance PQFN 3 x 3 package that delivers a high density, reliable and efficient solution for DC-DC converters in telecom, netcom, and high-end desktop and notebook computer applications.

Farnell, the leading multi-channel, high service distributor of electronic and industrial products, has been presented with a multitude of awards at this year’s electronica. The awards from leading suppliers such as Bournes, International Rectifier, Emerson, Lecroy, TDK-EPCOS and Microchip are a reflection of the company’s continuous drive to accelerate electronic design engineering growth through its multi-channel strategy and driving sales...

Vishay Intertechnology, Inc. today released a new 20-V p-channel TrenchFET® power MOSFET in a MICRO FOOT® chipscale package that features the industry’s smallest footprint and on-resistance ratings down to 1.2V.

Vishay Intertechnology has announced the release of 15 new power MOSFETS in a PowerPAK SC-70 package measuring 2mm by 2mm with a low 0.8-mm profile. The new offering includes a variety of configurations and voltage ratings for different applications, including single, single plus Schottky, and dual devices, in both n-channel and p-channel, in addition to n- and p-channel complementary pairs. The devices feature voltage ranges between 8V and 30V w...

Vishay Intertechnology has extended its LDO product family portfolio with the release of the new SiP21110 250-mA LDO voltage regulator. The cost-effective device features a low 35-μA typical ground current at a 1-mA load in the space-saving Thin SOT23-5L package.

Vishay has introduced the first device in a series of co-packaged, asymmetric power MOSFET pairs that reduces the space required for the high- and low-side power MOSFETs in dc-to-dc converters. The industry-first SiZ700DT in the new PowerPAIR package, which measures 6-mm by 3.7-mm, combines a low-side and high-side MOSFET in one compact device while still obtaining low on-resistance and high maximum current, saving space over using two discrete s...

Vishay has released three new 500-V MOSFETs that extend its Gen 6.2 n-channel planar FET technology to the TO-220, TO-220F, and TO-247 packages. The new SiHP18N50C (TO-220), SiHF18N50C (TO-220 FULLPAK), and SiHG20N50C combine their 500-V rating with low 0.270 Ω maximum on-resistance at a 10-V gate drive. This low RDS(on) translates into lower conduction losses that save energy in power factor correction (PFC) and pulsewidth modulation (PWM) ...

Vishay has introduced a new dual 20-V p-channel TrenchFET Gen III power MOSFET with the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK SC-70 2-mm by 2-mm footprint area.

Vishay Intertechnology has expanded its family of Gen III TrenchFET power MOSFETs with the release of two 20-V and two 30-V n-channel devices that are the first to offer TurboFET technology, which utilizes a new charge balanced drain structure to lower the gate charge by up to 45%, enabling significantly lower switching losses and faster switching.