Search results for "MOSFET"
NXP Announces GreenChip Solution for Non-Dimmable LED Retrofit Lamps
NXP Semiconductors N.V. today announced the SSL21081, a highly efficient, high-voltage LED driver IC for compact, non-dimmable retrofit lamps based on GreenChip technology. The SSL21081 platform makes it easy for LED retrofit lamp manufacturers to design cost-effective applications for the 100V, 110V and 120V markets with up to 95 percent efficiency, underscoring NXP’s commitment to smarter energy-efficient lighting solutions.
ROHM Semiconductor Announces The Industry’s First Mass-Produced “Full SiC” Power Modules
ROHM has recently announced the industry’s first mass production of SiC power modules (1200V/100A rated) comprised entirely of SiC power elements as custom module. Incorporating SiC inverters and converters for power conversion in industrial equipment provides a number of advantages over typical silicon-based IGBT modules such as switching loss reduction by 85%, approximately 50% less volume compared to conventional 400A-class Si IGBT modules a...
SiC Schottky Barrier Diodes Featuring the Industry’s Lowest VF1 from Rohm
ROHM has recently announced the development of second-generation SiC Schottky barrier diodes ideal for power supply circuits in PV power conditioners, industrial equipment, servers, air conditioners, and more.
Cree Technology Breakthrough Enables 50 Amp Silicon Carbide Power Devices, Bringing Efficiency and Cost Savings to a Broader Range of High-Power Applications
In a breakthrough that redefines performance and energy efficiency in high-power applications, Cree announces a new family of 50A Silicon Carbide (SiC) devices, including the industry's first 1700V Z-FETT SiC MOSFET.
Cree Releases SPICE Model for Silicon Carbide Power MOSFET
Cree, Inc. has expanded its design-in support for the industry's first commercially-available SiC MOSFET power devices with a fully-qualified SPICE model. Using the new SPICE model, circuit designers can easily evaluate the benefits Cree's SiC Z-FETT MOSFETs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.
Cree 1200V Z-Rec Family of Silicon Carbide Schottky Diodes Offers Higher Performance at Lower Cost for Power Conversion Applications
Cree announces a new family of seven 1200V Z-Rec silicon carbide (SiC) Schottky diodes optimized for price and performance and available in a range of amperages and packages. Cree is advancing the adoption of silicon carbide power devices into mainstream power applications by introducing a comprehensive family of SiC diodes with a wide range of amperage ratings and package options.
ZMDI LED driver ICs boost lumen-per-watt efficiency while keeping Bill of Material low
ZMD AG today announced two high-performance devices to complement its family of LED driver integrated circuits. The ZLED7020 and the ZLED7030 LED driver ICs operate at up to 98% efficiency, thus helping to achieve the highest possible lumen-per-watt output in high brightness LED applications.
Dual output step-up/inverting DC/DC converter for next generation displays
Torex Semiconductor is proud to introduce its latest DC/DC Converter for powering AMOLED display drivers and e-reader display panels. The XC9519 is a dual-output DC/DC converter which can generate both a positive and a negative voltage. The step-up converter circuit compares a built-in reference voltage of 1.0V to the FBP voltage (accuracy ±1.5%) and a positive output voltage can be set freely with the external components up to 18V.
A system approach to power management
Many approaches to power management sacrifice speed, cost or overall reliability. They impede the design process by requiring the consideration of hundreds of parts from different vendors, require the writing of microprocessor code and, if any hardware and timing changes need to be implemented, the board will require a respin.
Infineon`s 650V CoolMOS CFD2 Technology with Integrated Fast Body Diode Said to Take Energy Efficiency in Applications like Servers, Solar, Telecom SMPS and Lighting to the Next Level
With its latest generation of high-voltage CoolMOS MOSFETs Infineon is rolling out another innovation setting new standards in the field of energy efficiency. At the PCIM Europe 2011 (May 17-19) in Nuremberg, Germany, Infineon presents the new 650V CoolMOS™ CFD2 – the world`s first high-voltage transistor with both a drain-source voltage of 650V and an integrated fast body diode. The new CFD2 devices succeed the 600V CFD products, enabling no...