Search results for "MOSFET"

Vishay Intertechnology has announced the release of the industry's first 30-V monolithic power MOSFET and Schottky diode to be offered in a package with top and bottom heat dissipation paths for top performance in systems with forced air cooling. Offered in the PolarPAK package with double sided cooling, the new SkyFET SiE726DF device offers increased efficiency for high-current and high-frequency applications.

Vishay today introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK SC-70. The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technolog...

A power MOSFET with what is claimed to be the industry’s lowest on-resistance for a 60-V device in a package with double-sided cooling was released today by Vishay. The new SiE876DF, which comes in an SO-8 sized PolarPAK package, boasts maximum on-resistance of 6.1 milliohms at a 10-V gate drive, a 13 % improvement over the next best comparable device on the market.

Vishay Intertechnology, Inc. today released the industry's first 30-V p-channel power MOSFET in the SO-8 footprint area to boast maximum on-resistance down to 2.6 mΩ at a 10-V gate drive and 3.75 mΩ at 4.5 V. With these specifications, the new Vishay Siliconix Si7145DP, latest member of the TrenchFET Gen III p-channel family, achieves the lowest on-resistance ever for this voltage rating and footprint.

Vishay Intertechnology has announced an integrated DrMOS solution providing high-side and low-side n-channel MOSFETs plus a full-featured MOSFET driver IC, all in a single PowerPAK MLF6x6 package. Available in two versions tailored for 3.3-V or 5-V controllers respectively, the new SiC769 is fully compliant with the DrMOS specification for voltage regulators (VRs) in servers and desktop computers, graphics boards, workstations, game consoles, and...

Vishay Intertechnology has released new 20-V and 30-V p-channel TrenchFET power MOSFETs with a ±20-V gate source voltage that offer the industry’s lowest on-resistance for their device types in the SO-8 footprint.

Vishay Intertechnology has announced a 20-V n-channel power MOSFET plus Schottky diode. Featuring the 1.6-mm by 1.6-mm thermally enhanced PowerPAK SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32 V at 100 mA and a MOSFET with on-resistance ratings specified at gate drives down to 1.5 V.

Vishay Intertechnology has announced the industry’s first 190-V n-channel power MOSFET plus co-packaged 190-V power diode with a compact 2-mm by 2-mm footprint and an ultra-thin 0.75-mm profile. Offered in the PowerPAK SC-70 package, the SiA850DJ is also the industry’s first such device with an on-resistance rating at1.8-V VGS.

Vishay Intertechnology today released four new 600-V MOSFETs that extend its Super Junction FET technology to the TO-220, TO-220F, TO-247, and TO-263 packages.

Vishay Intertechnology, Inc. today released four new 500-V, 16-A n-channel power MOSFETs with ultra-low 0.38-Ω maximum on-resistance at a 10-V gate drive, and an improved gate charge of 68 nC, in the TO-220AB,TO-220 FULLPAK, D2PAK, and TO-247AC packages.