Search results for "SiC MOSFET"

Vishay has expanded its family of Gen III TrenchFET power MOSFETs down to 12 V with the release of a new n-channel device offering the industry’s lowest on-resistance and on-resistance times gate charge for a device with this voltage rating. The 12-V SiR494DP features a maximum on-resistance of 1.2 mΩ at a 10-V gate drive and 1.7 mΩ at a 4.5-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-t...

Vishay Intertechnology, Inc. today introduced the first p-channel TrenchFET Gen III power MOSFET in the chipscale MICRO FOOT package. The 20-V device features the industry’s lowest on-resistance for a p-channel MOSFET in the 1.5-mm by 1-mm footprint area.

Vishay introduced new 40 V and 60 V n-channel TrenchFET® power MOSFETs with the industry's lowest on-resistance and on-resistance times gate charge figures of merit (FOM) for devices with these voltage ratings in the SO-8 or PowerPAK® SO-8 packages.

Vishay has introduced a new 8 V p-channel TrenchFET power MOSFET featuring the industry's lowest on-resistance for a p-channel device in the 1.6 mm by 1.6 mm footprint area with a profile under 0.8 mm. In addition, the SiB437EDKT is the only such device to offer an on-resistance rating down to 1.2 V.

NEC Electronics Europe has introduced four MOSFET products: N0100P, N0301P, N0302P, and N0301N all housed in SOT-23F package which is an ideal choice for space- and power critical applications of all kinds. The new MOSFETs are available now.

NEC Electronics announced four new intelligent power devices (IPDs), the µPD166017, µPD166019, µPD166020 and uPD166021. Each high-side IPD is applicable for automotive lighting and other critical vehicle loads. Designed for on-board electronic control units (ECUs) typically used in head- and fog-light applications, the new devices, or power ICs, have an embedded power MOSFET for switching and a control chip for protection features in a si...

International Rectifier has expanded its dedicated family of automotive-qualified power MOSFETs for applications requiring low on-state resistance (RDS(on)) including on-board power supplies and heavy loads on Internal Combustion Engine (ICE) platforms, micro and full hybrid platforms

La dernière famille de MOSFET HEXFET de puissance d’International Rectifier combine une résistance à l’état passant (RDS(on)) extrêmement faible et un boîtier SOT-23 standard. Elle vise les applications telles que les commutateurs de charge et de décharge de batterie, les commutateurs de système et de charge, la commande de moteur à faible charge et les équipements télécoms.

International Rectifier annonce l’extension de son catalogue de MOSFET de puissance HEXFET avec une famille complète de composants moyenne tension, disponible en boîtier PQFN 5x6 mm avec clip de cuivre.

International Rectifier vient d’introduire une famille de MOSFET de puissance DirectFET®2 destinés aux applications automobiles de commutation haute fréquence telles que l’étage de sortie des amplificateurs audio classe D.