Search results for "Qualcomm"
Qualcomm deliver more than one million chips to connected applications
Qualcomm Technologies has announced at its IoT industry analyst workshop that the company is currently shipping more than one million chips per day for the IoT.
Qualcomm announce winners of the European QInF programme
Qualcomm Technologies has announced the winners of the Europe Qualcomm Innovation Fellowship (QInF) programme. QInF is an annual programme that focuses on recognising, rewarding, and mentoring the most innovative engineering PhD students across Europe and the US.
IoT collaboration emphasised at oneM2M Industry Day
On 13th July, in Memphis TN, technology companies from around the world gathered to advance adoption of the Internet of Things (IoT) through increased industry cooperation, as the global IoT standards initiative oneM2M held its second successful Industry Day.HPE, InterDigital, Qualcomm, AT&T and iconectiv all took part in the conference that was hosted by ATIS. oneM2M’s goal is to further collaboration on IoT initiatives and accelerate ...
Solar and wind power reinvented: latest news
Virtually all of the grid capacity being added in the world is renewable or nuclear nowadays. Solar and wind met 10% of electricity demand in March 2017 in the USA. Hydro electricity from a wet spring season on the West Coast, which alone provided more than 10% of the nation’s electricity, as well as biomass and geothermal power, all renewable energy sources combined met 24% of electric demand in March and if we add in the 20% we get from n...
Lemonbeat joins Open Connectivity Foundation
Lemonbeat GmbH has joined the Open Connectivity Foundation, OCF.The OCF, which was founded in February 2016 and is an alliance of leading industry representatives, has set itself the target of defining common specifications for the communication of devices from various manufacturers within a huge IoT. Members such as Intel, Qualcomm, Samsung, Microsoft and other industry giants have turned the OCF into one of the biggest standardisation alliances...
Strong memory market drives 2017 semiconductor boom
According to World Semiconductor Trade Statistics (WSTS), the semiconductor market was down 0.4% in first quarter 2017 from 4Q 2016 and up 18.1% from a year ago. The 0.4% decline in 1Q 2017 versus 4Q 2016 is strong compared to an average four percent decline from 4Q to 1Q over the previous five years. The relative strength in 1Q 2017 was driven by a strong memory market. The three largest memory companies - Samsung, SK Hynix and Micron Technology...
Gloves powered by soft robotics interact with VR environments
Engineers at UC San Diego are using soft robotics technology to make light, flexible gloves that allow users to feel tactile feedback when they interact with VR environments. The researchers used the gloves to realistically simulate the tactile feeling of playing a virtual piano keyboard.Engineers recently presented their research, which is still at the prototype stage, at the Electronic Imaging, Engineering Reality for VR conference in Burlingam...
Sub-10nm germanium GAA devices displayed at VLSI Symposia
New process improvements for next-gen devices were unveiled by imec at 2017Symposia on VLSI Technology and Circuits. For the first time, scaled strained germanium p-channel Gate-All-Around (GAA) FETs were shown with sub-10nm diameter, integrated on a 300mm platform. In addition, the research centre has obtained a significant improvement in device performance and electrostatic control with high-pressure anneal (HPA) for both strained germanium p-c...
Imec demonstrates breakthrough in ferroelectric memory
Imec has announced at the 2017 Symposia on VLSI Technology and Circuits the world’s first demonstration of a vertically stacked ferroelectric Al doped HfO2 device for NAND applications. Using a new material and a novel architecture, imec has created a non-volatile memory concept with attractive characteristics for power consumption, switching speed, scalability and retention.
Record low source/drain contact resistivity for PMOS transistors
At this week’s 2017 Symposia on VLSI Technology and Circuits taking place in Japan, imec, the research and innovation hub in nano-electronics and digital technology, reported record breaking values below 10-9Ω/cm2for PMOS source/drain contact resistivity. These results were obtained through shallow Gallium implantation on p-SiliconGermanium (p-SiGe) source/drain contacts with subsequent pulsed nanosecond laser anneal.