Search results for "gallium nitride"

The delivery of tomorrow’s clean electricity will be through an infrastructure characterised by diverse and widely distributed generating sites and predicated on technologies that must deliver continuously increasing performance and energy efficiency. Mark Patrick, Mouser Electronics, explains.

GaN brings efficiency advantages compared with silicon, say Giuseppe Bernacchia, senior principal application engineer and Moshe Domb, director application engineering at Infineon Technologies

GaN Systems has shared the latest space applications and innovations enabled by gallium nitride (GaN) power semiconductors.

A gallium arsenide MMIC amplifier from Analog Devices is in stock at distributor Richardson RFPD.

This reference design provides a design template for implementing a three-level, three-phase, silicon carbide/gallium nitride (SiC/GaN) based ANPC inverter power stage. The use of fast-switching power devices makes it possible to switch at a higher frequency of 100 kHz, reducing the size of magnetics for the filter and increasing the power density of the power stage. The multilevel topology allows the use of 600-V rated power devices at higher DC...

Fairview Microwave has unveiled a new series of Low Noise Amplifiers (LNAs) that are suited for use in electronic warfare, radar, space systems, R&D, prototype/proof of concept, ECM, microwave radio, VSAT, SATCOM, and test & measurement applications.

EPC has announced the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.

The new Vishay Dale PHPA Series of Thin Film Wraparound Chip Resistors are available at distributor New Yorker Electronics.

Available now from Mouser Electronics is the QPD0011 high-electron mobility transistor (HEMT) from Qorvo.

NXP Semiconductors has announced a milestone for 5G energy efficiency with the integration of Gallium Nitride (GaN) technology to its multi-chip module platform. Building on the company’s investment in its GaN fab in Arizona, NXP has announced RF solutions for 5G massive MIMO that combine the high efficiency of GaN with the compactness of multi-chip modules.