Search results for "gallium nitride"

Nexperia hasannounced its entry into the high-power silicon carbide diodes market with the introduction of 650V, 10A SiC (silicon carbide) Schottky diodes. This is a strategic move for Nexperia, already a trusted supplier of efficient power GaN (gallium nitride) field-effect transistors, to expand its high-voltage wide bandgap semiconductor device offering.

The VIPerGaN50 which has just been released by STMicroelectronics simplifies building single-switch flyback converters up to 50 Watts and integrates a 650V gallium-nitride (GaN) power transistor for superior energy efficiency and miniaturisation.

The EZ-PD BCR (Barrel Connector Replacement) is a highly integrated USB-C controller. Together with the USB-C connector, it replaces barrel connectors, custom connectors or legacy USB connectors in electronic devices.

In stock at distributor Mouser Electronics are 650V 34A GaN FETsfrom Transphorm.

ViewSonic, a global provider of visual solutions announces several ViewSonic ELITE professional gaming monitors with leading-edge Mini-LED technology.

A GaN FET-compatible analogue controller reduces bill of materials count and allows the design of a synchronous buck converter to be as simple as silicon FETs, says Zhihong Yu, senior staff manager, product marketing and applications engineering,Renesas Electronics America

TheA3G26D055N Airfast RF power gallium nitride (GaN) transistor from NXP Semiconductors is now being shipped by distributor Mouser Electronics.

Infineonand Panasonic have signed an agreement for the joint development and production of the second generation (Gen2) of their gallium nitride (GaN)technology, claiming to offer higher efficiency and power density levels. The performance and reliability combined with the capability of 8" GaN-on-Si wafer production mark Infineon’s strategic outreach to the growing demand for GaN power semiconductors. In accordance with market requirements,...

ACM Research have announced the launch of their Ultra ECP GIII plating tool to support WLP for compound semiconductors, with product offerings for silicon carbide (SiC), gallium nitride (GaN) and gallium arsenide (GaAs). The tool is also capable of plating gold (Au) into backside deep hole processes with greater uniformityandbetter step coverage. The tool features a fully-automated platform to support high volume manufacturing that accommodates b...

STMicroelectronics introduce new 45W and 150W MasterGaN devices for high-efficiency power conversion.Easing the transition to high-efficiency wide-bandgap technology, STMicroelectronics have released the MasterGaN3and MasterGaN5 integrated power packages for applications up to 45W and 150W, respectively.