Search results for "MOSFET"
European research project PROGRESSUS paves decarbonisation
At the conclusion of the PROGRESSUS research project 22 project partners presented the project's results in Bari, Italy.
Flyback architecture for reduced low-power AC/DC losses
Eggtronic has expanded its family of high-density power conversion solutions by unveiling a high-efficiency, low component count fixed-output flyback AC/DC converter reference design for applications operating at powers below 120W.
STMicroelectronics reveals integrated hot-swap and ideal-diode controller
The STMicroelectronics STPM801 is the market’s first automotive-qualified integrated hot-swap and ideal-diode controller featured for functional-safety applications.
Littelfuse unveils FDA117 Optically Isolated Photovoltaic Driver
Littelfuse introduces the FDA117 Optically Isolated Photovoltaic Driver, offering a floating power source for isolated switching applications across various industries.
New QSiC 1200V SOT-227 SiC modules advancing energy standards
SemiQ recently announced the expansion of its QSiC silicon carbide module portfolio. The launch includes a new series of 1200V MOSFETs, available both with and without 1200V SiC Schottky Diodes, packaged in SOT-227.
Power delivery over single twisted pair Ethernet
Originally developed at Xerox PARC in the 1970s, Ethernet has come a long way since its ratification as the IEEE 802.3 standard in 1983. It has evolved to support increasingly faster networks, more nodes, and longer distances while retaining backward compatibility with previous versions.
Infineon’s XENSIV PAS CO2 meets WELL and LEED standards
Infineon has announced that its XENSIV PAS CO2 has passed the performance requirements defined by the internationally recognised green building certifications WELL and LEED.
Seica at Semicon West USA
If you plan on attending the Semicon West show in San Francisco, CA this year, make sure you stop by the Seica booth - #1561!
CEA-Leti & Intel to develop atomically thin 2D TMDs
CEA-Leti and Intel have announced a joint research project to develop layer transfer technology of two-dimensional transition-metal dichalcogenides (2D TMDs) on 300mm wafers with the goal to extend Moore’s Law beyond 2030.
Power integrations releases ground-breaking 1250-Volt GaN switcher IC
Power Integrations released the world's highest-voltage, single-switch gallium-nitride (GaN) power supply IC, featuring a 1250-volt PowiGaN switch.