Search results for "gallium nitride"
Infineon’s GaN predictions for 2025
Infineon has announced an analysis piece on its 2025 predictions for Gallium Nitride (GaN) semiconductors.
Top 5 Power products in December
Electronic Specifier walks through the top 5 Power products released this December 2024.
Bourns announces addition to flyback transformer family
Bourns, Inc. announced a new addition to its automotive grade, AEC-Q200 compliant flyback transformer line.
Advantest launches KGD test cell for power semiconductors
Semiconductor test equipment supplier Advantest has announced an integrated test cell designed to maximise die-level test yields for wide-bandgap (WBG) devices essential to power semiconductors.
QPT die attach process for power electronics heat removal
QPT has just filed a patent for a novel way to attach dies to the heat spreaders or substrates which are typically Aluminium Nitride (AlN), which it calls qAttach.
Last-mile delivery vehicles targeted for electrification
Medium and heavy-duty vehicles (MHDVs) represent only 4% of the total vehicles in circulation worldwide but are responsible for 40% of all emissions.
TPS7H6013-SP by Texas Instruments
The TPS7H60x3-SP series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency applications. The series consists of the TPS7H6003-SP (200V rating), TPS7H6013-SP (60V rating), and the TPS7H6023-SP (22V rating).
Navitas retains Deloitte’s Fast 500 ranking for third year
Navitas has announced that the company’s revenue growth has been acknowledged for the third consecutive year, by Deloitte’s Technology Fast 500.
eBook gathers GaN challenges and benefits
Mouser Electronics has released a new eBook in collaboration with Analog Devices (ADI) and Bourns exploring the challenges and benefits of Gallium Nitride (GaN) technology in the pursuit of efficiency, performance, and sustainability.
Wise-integration opens Ottawa centre for WiseGan development
Wise-integration, a French pioneer in digital control of gallium nitride (GaN) and GaN ICs for power conversion, has announced the opening of its North American Design and Development Center in Ottawa, Ontario, Canada.