Search results for "gallium nitride"

Paige West speaks with Robert King, Reed Relay Product Manager, Pickering Electronics about how semiconductor test canbenefit from reed relays.

With SiC and GaN continuing their meteoric rise, how might these technologies impact the EV market going forward.

Bourns has introduced a new AEC-Q200 compliant, automotive grade, low profile, high creepage isolation transformer.

StratEdge has announced that it will be exhibiting in booth 923B at European Microwave Week (EuMW), being held at Porte de Versailles Paris, France from September 24-27, and booth 313 at IMAPS International Symposium for Microelectronics being held at the Encore Boston Harbor in Everett, Massachusetts, on October 1-2.

Infineon has announced that the company has succeeded in developing the world’s first 300mm power GaN wafer technology.

This article focuses on the Analog Devices MAX15258, which is designed to accommodate up to two MOSFET drivers and four external MOSFETs in single-phase or dual-phase boost/ inverting-buck-boost configurations. It is possible to combine two devices for triple-phase or quad-phase operation, achieving higher output power and efficiency levels.

Electronic Specifier takes a look at the top 5 power products to have been released in August 2024.

Charlie Munoz, Marketing Manager for the BLDC Motor Drivers at Texas Instruments, explores how GaN is enabling new gains in household energy efficiency and cost.

The LMG2100R044 device is a 90V continuous, 100V pulsed, 35A half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 100V GaN FETs driven by one high-frequency 90V GaN FET driver in a half-bridge configuration.

With wide bandgap semiconductors like Gallium Nitride (GaN) and Silicon Carbide (SiC) growing in popularity, it begs the question: GaN or SiC?