Search results for "gallium nitride"

EPC introduces the 40 V, 1.1 mΩ EPC2066 GaN FET, offering designers a significantly smaller and more efficient device than silicon MOSFETs for high-performance, space-constrained applications.

Gallium Nitride (GaN) has been nipping at silicon’s heels for dominance in IC design for 20 years. Its adoption is accelerating as prices fall and new uses for high power density chips are found. Caroline Hayes provides a status update.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, has signed a global distribution agreement with Richardson RFPD, an Arrow Electronics company.

Nexperia and KYOCERA AVX components salzburg agree partnership for gallium nitride automotive power modules.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, announced a new low RDS(on) 650V E-mode GaN HEMT device.

Navitas Semiconductor has announced that its next-generation GaNFast power ICs with GaNSense technology have been used in Lenovo's Legion C135 GaN charger.

AT PCIM Europe, Efficient Power Conversion Corporation announced the expansion of a selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET.

At PCIM Europe, Navitas Semiconductor announced the NV6169, a new high-power 650/800 V-rated GaNFast power IC with GaNSense technology to address higher-power applications such as 400-1000 W 4K/8K TVs and displays, next-generation gaming systems, 500W solar microinverters, 1.2kW data-center SMPS, and up to 4kW/5 hp motor drives.

Navitas Semiconductor and VREMT supplier to ZEEKR, Volvo, Polestar and Lotus, announced the opening of an advanced, joint R&D power semiconductor laboratory to accelerate EV power-system developments using Navitas’ GaNFast (gallium nitride, GaN) power ICs and GeneSiC (silicon carbide, SiC) power MOSFETs and diodes.

Kubos Semiconductors Ltd, the developer of LEDs based on cubic Gallium Nitride (GaN), in collaboration with researchers at Manchester and Cambridge Universities, have identified the potential for Kubos’ proprietary material to deliver LEDs capable of switching at significantly faster speeds than those produced in the hexagonal crystal phase.