Search results for "Mexico Technology Award "

Samsung Semiconductor Europe is presenting innovations in next-generationsemiconductor technologiesfor artificial intelligence (AI), automotive, and beyond at booth B6.602 at electronica 2024 from November 12-15 in Munich.

onsemi introduced the Treo Platform, ananalog and mixed-signal platformbuilt with Bipolar-CMOS-DMOS (BCD) process technology on an advanced 65nm node.

Renesas Electronics announced the world's first ‘8-in-1’ proof of concept (PoC) for E-Axle systems forelectric vehicles (EV), which controls eight functions using a single microcontroller (MCU).

Silicon Motion Technology, a global specialist in designing and marketing NAND flash controllers for solid-state storage devices, announces its collaboration with TOP-electronics, a specialised distributor and representative of electronic components, modules, and solutions.This strategic partnership aims to expand Silicon Motion's market presence across the EMEA region; delivering advanced Ferri embedded storage solutions and display interface so...

Forefront RF, a fabless semiconductor company based in Cambridge, UK, has announced the closure of its £16 million Series A funding round, backed by existing investors BGF and Foresight Group, alongside new VC partners, Octopus Ventures, and Cambridge Innovation Capital.

Researchers at TU Graz in Austria have achieved more accurate orbit predictions for both satellites and space debris, alongside an improved understanding of water masses present on Earth: achieved using satellite laser ranging technology.

In the electronics industry, sustainability, speed, usability, size, and a whole host of other ‘must haves’ in product design are integral – and the engineers designing these products must learn to pivot fast as both technology and needs change.

The move up the electromagnetic spectrum (EM) into millimeter waves (MMW) is proving to be a double-edged sword. System designers eager to leverage wider bandwidths and incredibly high data throughputs must also contend with a host of new challenges. Of amplified importance – particularly between 75-330 GHz – is the issue of attenuation.

Digitalisation, AI, and automation are intensifying demands on data centre (DC) IT infrastructure, driving the need for effective cooling solutions.

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection and flexible Miller-clamp architecture.