Search results for "SiC MOSFET"

Advantest will feature its latest test solutions at SEMICON Japan 2023 at the Tokyo Big Sight (December 13-15).

Rutronik is adding PANJIT's new 30V and 40V LV automotive MOSFETs to its portfolio.

Nexperia has announced that its GaN FET devices, featuring next-gen high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now available to designers of industrial and renewable energy applications.

China’s semiconductor sector is on the rise as a global contender, propelled by progress in advanced node manufacturing.

Navitas Semiconductor announced that Exide Technologies' next-generation, high-frequency fast chargers for industrial material handling equipment have adopted new GeneSiC power semiconductors.

The power electronics market continues to grow due to government regulations, the demand for renewables, and the need for increased efficiency.

For high−voltage switching power applications, silicon carbide or SiC MOSFETs bring notable advantages compared to traditional silicon MOSFETs and IGBTs. Switching high−voltage power rails in excess of 1,000 V, operating at hundreds of kHz is non−trivial and beyond the capabilities of even the best superjunction silicon MOSFETs. This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical ...

UCC14141-Q1 is an automotive qualified high isolation voltage DC/DC power module designed to provide power to IGBT or SiC gate drivers. The UCC14141-Q1 integrates a transformer and DC/DC controller with a proprietary architecture to achieve high density with very low emissions.

The growing power demand in data centres and computing applications necessitates advancements in power efficiency and compact power supply design.

For high−voltage switching power applications, silicon carbide or SiC MOSFETs bring notable advantages compared to traditional silicon MOSFETs and IGBTs. Switching high−voltage power rails in excess of 1,000 V, operating at hundreds of kHz is non−trivial and beyond the capabilities of even the best superjunction silicon MOSFETs. This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical ...