Search results for "Elma Electronic"

onsemi introduced the Treo Platform, ananalog and mixed-signal platformbuilt with Bipolar-CMOS-DMOS (BCD) process technology on an advanced 65nm node.

Renesas Electronics announced the world's first ‘8-in-1’ proof of concept (PoC) for E-Axle systems forelectric vehicles (EV), which controls eight functions using a single microcontroller (MCU).

The TLV1H103-SEP is a 325MHz, high speed comparator with rail-to-rail inputs and a propagation delay of 2.5ns.

Texas Instruments' power modules with integrated inductors or integrated transformer to enable small solution size, an increased performance, low EMI and ease of use.

This downloadable reference guide uncovers the journey to WiFi 7 and explores how its reliable, low-latency connectivity will enable advanced future applications, including immersive gaming, extended reality, Industrial IoT, remote connectivity and videoconferencing.

Tektronix has unveiled a brace of “breakthrough power devices set to accelerate innovation in industries demanding greater power capacity and efficiency”, at electronica 2024.

The TLV1H103-SEP is a 325MHz, high speed comparator with rail-to-rail inputs and a propagation delay of 2.5ns. The combination of fast response and wide operating voltage range make the comparator an excellent choice for narrow signal pulse detection and data and clock recovery applications in radar imaging and communications payload systems.

The simplest and smallest solution for DC/DC voltage conversion. Our power modules with integrated inductors or integrated transformer to enable small solution size, an increased performance, low EMI and ease of use.

This downloadable reference guide uncovers the journey to WiFi 7 and explores how its reliable, low-latency connectivity will enable advanced future applications, including immersive gaming, extended reality, Industrial IoT, remote connectivity and videoconferencing.

The RES60A-Q1 is a matched resistive divider, implemented in thin-film SiCr with Texas Instruments’ modern, high-performance, analog wafer process. A high quality SiO2 insulative layer encapsulates the resistors and enables usage at extremely high voltages, up to 1400VDC for sustained operation or 4000VDC for HiPOT testing (60s).