Search results for "tvs diodes"
Vishay - 12 New 45 V TMBS Trench MOS Barrier Schottky Rectifiers in Power TO-220AB, ITO-220AB, and TO-263AB Packages for PV Solar Cell Bypass Protection
Vishay has expanded its offering of TMBS Trench MOS Barrier Schottky rectifiers with 12 new 45 V devices in three power package options that feature a wide range of current ratings from 10 A to 60 A. With extremely low forward voltage drops down to 0.33 V typical at 10 A, the rectifiers are optimized for use in solar cell junction boxes as bypass diodes for protection.
ON Semiconductor unveils Class D audio amplifier for flat panel TVs with digital power limit and selectable gain
ON Semiconductor, a premier supplier of high performance, silicon solutions for energy efficient electronics has introduced the NCS8353 stereo audio amplifier, a Class D device with high efficiency levels (>87%), that climates the need for the inclusion of a heatsink in the system design.
ON Semiconductor expands technologies for military and aerospace markets with discrete semiconductors qualified to MIL-PRF-19500
Target applications for new small signal transistors include switching and linear amplification in missile guidance, munitions, radio communications, and commercial and military avionics systems
Reference Design for an Integrated LCD TV Power and Inverter Supply
ON Semiconductor has released its latest GreenPoint open reference design for LCD TV power supplies. This 180W High Voltage LCD Integrated Power Supply (HV-LIPS) combines the main system power with the backlight inverter. By implementing an architecture where the inverter is directly powered from the 400 volt (V) PFC rail, the reference design eliminates a complete power conversion stage, improving overall system efficiency, simplifying the desig...
ON Semiconductor Releases New Master Components Selector Guide
ON Semiconductor has published the latest edition of its Master Components Selector Guide. This 370-page document has comprehensive specification data for the company’s entire portfolio of components and the various package types they are offered in.
ON Semiconductor Extends High-Voltage Power Solutions Offerings with 30 Volt N-Channel Power MOSFETs with Integrated Schottky Diodes
ON Semiconductor has broadened its portfolio of N-channel power MOSFET devices with the introduction of new 30 V products with integrated Schottky diodes. The NTMFS4897NF, NTMFS4898NF and NTMFS4899NF have maximum RDS(on) values of 2 mΩ, 3 mΩ and 5 mΩ respectively at 10 V, optimized for synchronous side in buck converter applications to achieve higher power efficiency. Typical gate charge specifications of 39.6 nC, 25.6 nC and 12.2 nC respec...
Isabellenhütte has appointed Jürgen Brust as Managing Director
Isabellenhütte Heusler GmbH & Co. KG, one of the world’s leading manufacturers of Alloys for Thermocouples and Resistance Alloys as well as Alloys for Low-Impedance Precision and Power Resistors, has appointed Jürgen Brust as new Managing Director. On July 1, 2009, the 52-year old joined Managing Director Peter Müller on the management board as head of Research and Development and Production for the aforementioned business areas including th...
Electronica News: RS Components Agrees distribution agreement with Bourns AG
RS Components today announced that it has signed a new European distribution deal with Bourns AG (“Bourns”) for distribution of Bourns® products within Europe. Under the new agreement RS will add more than 1500 new Bourns® products to its stock profile including a full range of circuit protection devices, trimmers, potentiometers, encoders and further resistive and inductive products.
Les régulateurs LDO de Diodes atteignent une précision de 2% sur la gamme de températures industrielle
Diodes Incorporated a introduit une paire de régulateurs linéaires LDO (low drop-out) fonctionnant dans la gamme de température industrielle de -40°C à +85°C. Adaptés à des applications telles que les décodeurs TV, les routeurs et les écrans LCD, ces régulateurs AP7335 300mA, avec un drop-out de 150mV, et AP7365 600mA, avec un drop-out de 300mV, opèrent avec une tension de sortie fixe ou ajustable et une précision de 2% sur toute la ...
Des MOSFET endurcis avec des diodes capables de traiter les exigences des équipements de communication VoIP
Diodes Incorporated a étendu sa gamme de MOSFET avec des composants 60 V canal N, adaptés aux besoins des équipements de communication VoIP. Conçus pour traiter les impulsions élevées de courant nécessaires pour générer des alimentations sur la connexion de ligne d'abonné (tip et ring) et résister à l'avalanche d'énergie induite lors de la commutation, les circuits de la série DMN60xx répondent aux exigences de la commutation au pr...