Search results for "SiC MOSFET"

SemiQ recently announced the expansion of its QSiC silicon carbide module portfolio. The launch includes a new series of 1200V MOSFETs, available both with and without 1200V SiC Schottky Diodes, packaged in SOT-227.

Infineon Technologies is propelling motor drive applications into the future with its newly unveiled OptiMOS 6 200V MOSFET product line.

Infineon Technologies has initiated legal action against Innoscience. The lawsuit, filed in the Central District of California's district court, seeks a permanent injunction against Innoscience for alleged infringement of an Infineon-owned United States patent.

Semiconductor test equipment supplier Advantest will feature its latest test solutions at SEMICON China 2024 in Shanghai (March 20-22).

Navitas Semiconductor, the pure-play, next-generation power semiconductor company and industry pioneer in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced their AI data centre technology roadmap for up to three times power increase to support similar exponential growth in AI power demands expected in just the next 12–18 months.

Toshiba Electronics has launched the TWxxxZxxxC series of 10 silicon carbide (SiC) MOSFETs based upon their third-generation technology.

The PCIM Europe, the international conference for power electronics, is pleased to publish its comprehensive conference programme for the upcoming event.

Offering what it describes as unmatched power density and efficiency, Qorvo says its latest 1200V SiC half-bridge and full bridge power modules are set to revolutionise the industries of electric vehicle (EV) charging, solar inverters, and industrial power supplies.

Electronic Specifier takes a look at the top 5 passives products to have been released in February 2024.

Vishay Intertechnology has introduced a new 80V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET Gen IV MOSFETs in a single 3.3 x 3.3 mm PowerPAIR 3x3FS package.