Search results for "MOSFET"
Infineon drives decarbonisation and digitalisation for a greener future
At PCIM Europe 2024, Infineon Technologies will showcase its latest semiconductor, software, and tooling solutions addressing today’s green and digital transformation challenges.
5.7kVrms, ±10A single-channel isolated gate driver with 2-level turn off for IGBT/SiC FETs
The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21732 has up to ±10A peak source and sink current.
Magnachip unveils new 8th-generation 150V MXT MV MOSFETs
Magnachip Semiconductor Corporation announced the launch of two new 150V MXT MV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), using its 8th-generation trench MOSFET technology.
ROHM SiC and EcoGaN at PCIM Europe 2024
During this year’s PCIM Europe in Nuremberg, Germany, June 11th – 13th, ROHM will present its new power semiconductor solutions with a special focus on wide bandgap devices.
STMicroelectronics reveals monolithic automotive synchronous buck converters
STMicroelectronics introduced automotive-qualified step-down synchronous DC/DC converters designed to save space and ease integration in applications such as body electronics, audio systems, and inverter gate drivers.
Vishay increases power density for POL converters
New Yorker Electronics has announced its release of Vishay’s new 6A, 20A, and 25A microBRICK synchronous buck regulator modules designed to deliver increased power density and efficiency for point of load (POL) converters.
TPSI2140-Q1 by Texas Instruments
The TPSI2140-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2140-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply.
SiC FET lowers conduction losses
Wide Band Gap Devices like Silicon Carbide (SiC) Field Effect Transistors (FETs) are more and more considered for High-Voltage and High Power applications because of the capability of higher switching frequencies and thus better efficiency than common Silicon FETs.
A fresh look at tried and tested power sourcing
Challenging traditional bi-directional sourcing for power supplies, ADI’s Jhun Rennel Sanchez and Anthony Serquiña, describe how to create a dual-output voltage rail with source and sink functionality for ATE applications.
UCC5350 by Texas Instruments
The UCC53x0 is a family of single-channel, isolated gate drivers designed to drive MOSFETs, IGBTs, SiC MOSFETs, and GaN FETs (UCC5350SBD).