Search results for "gan"

Indium Corporation will showcase its high-reliability, gold-based precision die-attach (PDA) preforms for critical laser and RF applications at SPIE Photonics West, taking place from January 27thFebruary 1stin San Francisco.

Renesas and Transphorm have announced their agreement for Renesas to acquire all outstanding shares of Transphorm. The acquisition, valued at approximately $339 million, is set to significantly enhance Renesas's power portfolio with the addition of in-house GaN technology, pivotal for next-generation power semiconductors.

Sanan Semiconductor has appointed Luminus Devices as its exclusive sales channel in the Americas.

CML Micro has recently acquired MwT, a supplier of MMIC and mmWave technology based in California, US.

EPC has announced the introduction of two new 40V rated radiation-hardened GaN FETs, with packaged versions.

Nisshinbo Micro Devices has launched the NJG1188KG1 intended for BS/CS TV, TV Tuner Module, STB and other broadcasting applications.

Bel Fuse has expanded its line of EOS power supplies with the introduction of the EPG300 and EPG500 series of AC-DC power supplies based on new, efficient GaN technology design.

QPT Limited recently announced that it has created the drive, control, and sense technologies to maximise GaN transistor performance and overcome design challenges in the 100 kHz to 20 MHz frequency range for high-power and high-voltage applications that use hard switching.

Richardson RFPD is offering availability and full design support capabilities for a new reference design from NXP Semiconductors.

STMicroelectronics' first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, trims dimensions and bill-of-materials costs in applications that demand superior wide-bandgap efficiency with robust safety and electrical protection.