Search results for "gan"

This week at the 2011 IEEE MTT-S International Microwave Symposium, Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the TGI1314-25L, a gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT), the latest addition to its power amplifier product family.

TriQuint Semiconductor, Inc has announced several milestones related to its industry leading Gallium Nitride (GaN) developments. Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes GaN will play a key role.

Sophisticated cyber-attacks like last year’s stuxnet worm grab the headlines and trigger massive investment in anti-virus software but the chief threat to data centre security today remains ‘physical’ according to Alex Rabbetts of Norwich-based colocation specialists, Sentry42.

AWR Corporation, the innovation leader in high-frequency electronic design automation (EDA), announced today the release and immediate availability of a new process design kit (PDK) supporting the Cree, Inc. high-power gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) foundry process. The new Cree/AWR PDK enables MMIC designers to model Cree’s GaN HEMT MMIC process within AWR&rsquo...

Soitec announced today they are working together to develop engineered gallium nitride (GaN) substrates. The alliance will draw on Sumitomo Electric’s sophisticated GaN wafer manufacturing technology and Soitec’s unique Smart Cut™ layer transfer technology by which ultra-thin GaN layers are transferred from a single GaN wafer to produce multiple, engineered GaN substrates. The engineered substrates retain the original, high crystalline qual...

Finetech announces that it sold 12 bonding systems within the past year to prominent university labs and research centers. Of the 12, three systems were purchased by California universities, including a Nanofabrication Facility as well as Electrical Engineering and Physics departments.

Nujira and Xilinx today announced the first successful integration of envelope tracking (ET) technology with a third-party digital pre-distortion (DPD) solution running on an FPGA. The two companies have delivered a reference design for a cellular base station PA circuit with Nujira’s Coolteq.h envelope tracking modulator linearised by a Xilinx DPD block running on a Xilinx Virtex 6 FPGA platform. Envelope signal generation in the FPGA was impl...

Link Microtek, the specialist supplier of RF and microwave components and subsystems, has announced the availability of a new solid-state high-power amplifier module that has been designed for use in military mobile jamming systems to counter the threat of IEDs.

Yole Développement and EPIC announce their report dedicated to the LED industry: “Status of the LED Industry”. The report presents all applications of LEDs and associated market metrics, LED cost reduction opportunities, entire LED value chain, a deep analysis of the general lighting application and an analysis of geographical trends.

Bridgelux Inc has shattered its previous industry record for highest Lumen per Watt values for Gallium Nitride on Silicon (GaN-on-Si). Using its proprietary buffer layer technology, the company has demonstrated growth of crack-free GaN layers on 8-inch silicon wafers, without bowing at room temperature, extending the company’s lead in driving the performance and manufacturability of GaN LEDs on silicon substrate.