Search results for "gan"
Semi-Polar GaN wafers for LED & LD device makers
Technologies and Devices International, Inc. (TDI), part of the Oxford Instruments Group, and Ostendo Technologies are pleased to announce the availability of Semi-Polar (11-22) GaN layer on sapphire substrate wafers using Ostendo’s proprietary design and TDI’s proprietary Hydride Vapour Phase Epitaxy (HVPE) technology.
Express Boundary-scan Controller
JTAG Technologies, a leading provider of IEEE Std. 1149.1 solutions for testing and programming high-density PCBs, has announced a further extension to its line of high-performance boundary-scan IEEE Std. 1149.1 controllers. Known as the DataBlaster JT 37x7/PCIe, the new unit offers support for the popular PCI-express slot format found extensively in today’s PCs. The PCIe bus is a high-speed serial replacement of the older parallel PCI bus.
RF Micro Devices Expands High Power GaN Product Portfolio
RF Micro Devices, Inc announced that RFMD has qualified and production released the RF3934, a 140-watt highly-efficient gallium nitride (GaN) RF unmatched power transistor (UPT) with superior performance versus competing GaAs and silicon power technologies.
Broadband Power Amplifier for 4G base stations
Nujira and RF Micro Devices announced that they will be demonstrating an efficient broadband power amplifier (PA) design for 4G base stations at Mobile World Congress, Barcelona, February 2010. The design integrates the new RFMD RFG1M family of high performance gallium nitride (GaN) amplifiers with Nujira's Coolteq.h envelope tracking power modulators.
RF Micro Devices(R) Expands Family of GaN Unmatched Power Transistors
RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD® has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies.
Imec processes first power devices on 200mm CMOS-compatible GaN-on-Si
Imec and its partners in the GaN industrial affiliation program (IIAP) have produced device-quality wafers with GaN/AlGaN layers on 200mm silicon wafers. With these wafers, functional GaN MISHEMTs were processed using standard CMOS tools.
GLOBALFOUNDRIES enters a broad strategic partnership with imec
GLOBALFOUNDRIES, one of the world’s leading semiconductor foundries, has signed a strategic long-term partnership on sub-22nm CMOS scaling and GaN-on-Si technology with the nanoelectronics R&D center imec.
Imec presents new GaN-on-Si architecture for enhancement mode power switching devices
At this weeks International Electron Devices Conference, the nanoelectronics research center imec presents an innovative, simple and robust GaN-on-Si double heterostructure FET (field effect transistor) architecture for GaN-on-Si power switching devices. The architecture meets the normally-off requirements of power switching circuits and is characterized by low leakage and high breakdown voltage, both essential parameters to reduce the power los...
Irish Manufacturer Expands High-speed Machining With 5-axis Acquisitions
As far back as 1998, Smithstown Light Engineering in Shannon, Co Clare, was in the vanguard of high-speed metalcutting, having installed the 12th machining centre ever built by the German firm, Roeders. The 3-axis, vertical-spindle machine has been in continual operation ever since and its 44,000 rpm spindle is still the fastest in the Irish manufacturer's factory.
Uprated conversational control cuts cycle times by a third
Two Hurco VMX30t vertical machining centres (VMCs) have been added to the subcontract machine shop of Schivo Group in Waterford, on the south coast of Ireland. Compared with a VMX42 installed in 2004, the latest machines are 50 per cent more productive, due entirely to the increased functionality of Hurco's conversational programming software, WinMax, incorporated into the control systems.