Search results for "photodiodes"
NeoPhotonics Announces General Availability of Its Integrated Coherent Receiver (ICR) for 100 Gbps Coherent Transmission Systems
NeoPhotonics today announced at the European Conference and Exhibition on Optical Communications (ECOC) the general availability of its Integrated Coherent Receiver (ICR) for 100 Gbps DWDM transmission systems. The ICR is an integrated intradyne receiver based on NeoPhotonics' Photonic Integrated Circuit (PIC) technology.
Ultravolt - New AC-DC High Voltage Power System Line
UltraVolt, Inc., the leading manufacturer of standard-product high-voltage power supplies, today announced a new line of benchtop high voltage power systems, the BT Series. Continuing in UltraVolt’s tradition of high reliability and efficiency, the BT Series offers flexible output voltages and polarity for the benchtop high voltage power supply market. Each system houses a high voltage power supply from UltraVolt’s microsize/micropower produ...
3DIC & TSV Interconnects 2012 Business Update report from Yole Développement
Yole Développement is pleased to release its 3DIC & TSV Interconnects 2012 Business Update report. In this report, Yole Développement provides an update of the 3DIC & TSV technology market. Yole Développement’s analysts define the market forecast for the next 5 years and provide deeper understanding of supply chain challenges and moves that are currently happening in this fascinating “middle-end” industry space.
SUR-Series: performance APDs enhanced in the DUV/UV wavelength range
UV enhanced APDs have been developed by LASER COMPONENTS. Avalanche photodiodes have a reach through structure allowing low noise and sensitivity in the blue and UV wavelength range superior to any similar detector available on the market. Furthermore, the sensitivity of the new reach-through APD extends further into the DUV than any devices currently available on the market.
APD Modules – Reliable Light Detection from 400 to 1700 nm
Make Detecting More Light Easier on Yourself
Wide Spectral Response InGaAs PIN Photodiode
Hamamatsu Photonics has introduced the G10899 series of InGaAs PIN photodiodes, featuring a very wide spectral response range of 0.5 to 1.7 µm. Standard InGaAs PIN photodiodes only offer a useful response range from 0.9 to 1.7 µm, with silicon photodiodes being used to cover from 400 nm to 1.1 µm. The new G10899 can provide the end user with the ability to implement only one detector, where in the past they might need two.
Vishay - Automotive-Qualified PIN Photodiodes and Phototransistors Combine Low 0.85-mm Height with Sensitivity to UV, Visible, and Near-Infrared Light
Vishay has broadened its optoelectronics portfolio with the introduction of the new AEC-Q101-qualified miniature TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors. Featuring an 0805 surface-mount package with an ultra-small 1.25-mm by 2.0-mm footprint and low 0.85-mm profile, the devices are available with spectral sensitivity to ultraviolet, visible, and near-infrared, or to near-infrared radiation only.
Vishay Intertechnology Introduces Signal Conditioning ICs Designed to Process IR Remote Control Signals from Discrete Photodiodes
Vishay Intertechnology, Inc. has broadened its optoelectronic portfolio with the introduction of signal conditioning ICs suitable for processing IR remote control signals from discrete photodiodes. Offered in small QFN packages measuring 2 mm by 2 mm by 0.76 mm, the VSOP383.. and VSOP584.. families are capable of processing continuous data transmission and feature a wide supply voltage range and low supply current.
Opto Diode introduces high power, narrow beam, red LED
AP Technologies announces the international release of the new OD-624L high output, narrow beam red LED from Opto Diode Corporation, a global supplier of advanced performance photodiodes and high reliability, visible and IR LEDs.
Hamamatsu Photonics IR-Enhanced Silicon Avalanche Photodiodes
Hamamatsu Photonics introduce a new range of silicon detectors and image sensors that offer enhanced near-infrared sensitivity. Using unique laser processing technology, MEMS structures can be fabricated on the silicon surface which act to reduce reflections and increase the surface area of the active element. This process drastically increases the sensitivity in wavelengths longer than 800nm.