Search results for "SiC MOSFET"

The TMS320F2838x (F2838x) is a member of the C2000 real-time microcontroller family of scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching frequencies, and supporting the use of GaN and SiC technologies.

STMicroelectronics has announced the L99H92 automotive DC motor pre-driver for system monitoring.

ROHM and STMicroelectronics have announced the expansion of the existing multi-year, long-term 150mm silicon carbide (SiC) substrate wafers supply agreement with SiCrystal, a ROHM group company.

Infineon Technologies introduces theMOTIX TLE9140EQW gate driver ICfor brushless DC motors targeting the demanding 24/48 V market.

Navitas Semiconductor, the pure-play, next-generation power semiconductor company and industry specialist in GaN power ICs and SiC technology, has announced that Virtual Forest, one of India’s leading electronics design companies specialising in motor control and human interface technologies for consumer appliances, fluid movement, and mobility, has adopted its GaNFast power integrated circuits (IC) technology for a zero-emission, powerful ...

Infineon Technologies supplies its power semiconductor devices to FOXESS, a fast-growing specialist in the green energy industry and a manufacturer of inverters and energy storage systems.

The LMG1210 is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driver designed for ultra-high frequency, high-efficiency applications that features adjustable deadtime capability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize system efficiency.

Power semiconductors based on silicon carbide (SiC) offer several advantages, like high efficiency, power density, voltage resistance, and reliability.

The TMS320F28P65x (F28P65x) is a member of the C2000 real-time microcontroller family of scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching frequencies, and supporting the use of IGBT, GaN, and SiC technologies.

Toshiba has launched a new range of 650V N-channel power MOSFETs, the TK042N65Z5 and TK095N65Z5 in TO-247 package.