Search results for "gan"
Nitronex surpasses 500,000 GaN RF semiconductor devices shipped
Expanding markets and customers, plus a robust U.S.-based supply chain, sets the stage for continued rapid growth
Agilent Technologies Announces Availability of Mitsubishi Electric’s Nonlinear RF Model Library for Advanced Design System
Agilent Technologies Inc. today announced that the latest model library for Mitsubishi Electric’s nonlinear GaAs and GaN RF devices is now available for use with Agilent’s Advanced Design System. The upgraded library works seamlessly with ADS 2009 Update 1, as well as prior ADS releases. ADS2011 and future versions will also be supported. The model can be obtained by contacting Mitsubishi Electric.
Agilent Technologies’ Debuts Breakthroughs in Power Amplifier Module Design for Next Release of Advanced Design System
Agilent Technologies Inc. today unveiled new technologies and breakthroughs for RF power amplifier design. These capabilities and more will be part of the next major release of Agilent’s flagship Advanced Design System. Agilent’s ADS 2012 is expected to ship in August.
RFMD To Showcase Industry-Leading High Performance RF Components At 2011 IEEE International Microwave Symposium
RF Micro Devices, Inc. has announced the Company will showcase its broad portfolio of industry-leading products and technologies for the wireless and wired broadband markets at the 2011 IEEE International Microwave Symposium (IMS) in Baltimore, Maryland, from June 6 to June 8, 2011.
Toshiba Expands GaN HEMT Product Family with Power Amplifier for Extended Ku-Band Satcom Applications
This week at the 2011 IEEE MTT-S International Microwave Symposium, Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the TGI1314-25L, a gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT), the latest addition to its power amplifier product family.
TriQuint demonstrates gallium nitride leadership by achieving key development milestones
TriQuint Semiconductor, Inc has announced several milestones related to its industry leading Gallium Nitride (GaN) developments. Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes GaN will play a key role.
Data Centre security is still flawed say Sentry42
Sophisticated cyber-attacks like last year’s stuxnet worm grab the headlines and trigger massive investment in anti-virus software but the chief threat to data centre security today remains ‘physical’ according to Alex Rabbetts of Norwich-based colocation specialists, Sentry42.
AWR - Process Design Kit (PDK) For Cree GAN HEMT MMIC Foundry
AWR Corporation, the innovation leader in high-frequency electronic design automation (EDA), announced today the release and immediate availability of a new process design kit (PDK) supporting the Cree, Inc. high-power gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) foundry process. The new Cree/AWR PDK enables MMIC designers to model Cree’s GaN HEMT MMIC process within AWR&rsquo...
Soitec and Sumitomo Electric Announce Collaboration on Development of Engineered GaN Substrates
Soitec announced today they are working together to develop engineered gallium nitride (GaN) substrates. The alliance will draw on Sumitomo Electric’s sophisticated GaN wafer manufacturing technology and Soitec’s unique Smart Cut™ layer transfer technology by which ultra-thin GaN layers are transferred from a single GaN wafer to produce multiple, engineered GaN substrates. The engineered substrates retain the original, high crystalline qual...
Finetech Sells 12 Bonding Systems to University Labs to Advance Research
Finetech announces that it sold 12 bonding systems within the past year to prominent university labs and research centers. Of the 12, three systems were purchased by California universities, including a Nanofabrication Facility as well as Electrical Engineering and Physics departments.