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Enpirion announced the availability of the EN2300 family of fully integrated 12 Volt DC-DC converters, implemented in the company’s industry leading power MOSFET technology with double the power density over alternative solutions.

RF design specialist Amplifier Technology Ltd has developed a new range of compact broadband pallet amplifiers which are to be shown for the first time at DSEi in September 2011.

M/A-COM Technology Solutions is showcasing a broad portfolio of new products suitable for military communications at the MILCOM, 2011 tradeshow, in Baltimore, Maryland.

In 2010, Dr Rudolf Ganz, Managing Director of DEUTA-Werke GmbH and DEUTA Controls GmbH, located in Bergisch Gladbach, and Andreas Kraut, CTO and CSO of Jetter AG in Ludwigsburg, initiated a cooperation of both companies which has now lead to establishing a strategic partnership. This enables both partners to offer their respective customers a larger range of solutions.

Renesas Electronics have announced the development of the MC-7802, a gallium nitride (GaN) power amplifier module for 1-gigahertz (GHz) CATV (cable television) systems.

RF Micro Devices, Inc. has announced its Foundry Services business unit has expanded its portfolio of process technologies to include two additional GaAs process technologies — RFMD's FD25 low noise pHEMT process and RFMD's FET1H switching pHEMT process. The two additional GaAs pHEMT process technologies are available immediately to foundry customers.

Preview of NXP's GaN demos at IEEE MTT-S International Microwave Symposium 2012 this week, including a multi-stage GaN line-up, Class E amplifier and digital switched mode power amplifier (SMPA).

Nitronex has developed a 48V GaN-on-Si process platform. Designated NRF2, this new platform delivers double the power density, 1-2dB higher gain, improved broadband performance, higher breakdown voltage and higher supply voltage operation over Nitronex’s 28V NRF1 process technology.

Addressing market demand for RF power devices featuring enhanced ruggedness and wideband operation over a broad frequency range, Freescale has released two highly versatile devices engineered to deliver new levels of linearity and ruggedness for RF power products manufactured using LDMOS process technology.

RFMD’s new RF3928B is a 65V 380W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance, and general purpose broadband amplifier applications. The RF3928B is a matched GaN transistor in a hermetic, flanged ceramic package. This package provides thermal stability through the use of advanced heat sink and power dissipation technologies.