Search results for "qorvo"

Availability and full design support capabilities for a new 2W GaN driver amplifier from Qorvo have been announced by distributor Richardson RFPD. The TGA2958-SM is a packaged Ku-band amplifier fabricated on Qorvo’s 0.15um GaN on SiC production process (QGaN15). Operating over a 13-18GHz bandwidth, the device delivers 2W of saturated output power with 20dB large signal gain and > 25% power added efficiency.

Three new GaN RF transistors in low-cost plastic packages designed to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems were unveiled by Qorvo at European Microwave Week in Paris. The TGF2977-SM, TGF2978-SM, and TGF2979-SM are unmatched GaN transistors designed to operate in the 8-12GHz frequency band.

IC Insights has examined the huge surge of Merger & Acquisition (M&A) activity in the IC industry during the first six months of 2015. In just the first half of 2015, announced semiconductor acquisition agreements had a combined total value of $72.6bn, which was nearly six times the annual average for M&A deals struck during the five previous years (2010-2014).

A new pHEMT dual RF amplifier from Qorvo is in stock at distributor Richardson RFPD. The TAT7472A1F is a 75Ω RF amplifier designed for CATV use but capable of operation up to 1218 MHz, making it suitable for DOCSIS 3.1. It contains two separate amplifiers for push-pull applications and is fabricated using 6-inch GaAs pHEMT technology to optimise performance and cost.

The complete, integrated Qorvo portfolio of products is now available at Richardson RFPD. The distributor's new role follows the merger of TriQuint Semiconductor and RFMD to form Qorvo. Richardson RFPD has been a leading distributor of TriQuint products for several years and the distributor now also markets RFMD products under the Qorvo umbrella.

A new discrete GaN on SiC HEMT from TriQuint / Qorvo is now being shipped by Richardson RFPD with full design support capabilities. The 30W (P3dB) T2G4003532 operates from DC to 3.5GHz and is constructed with TriQuint’s TQGaN25 production process, which features advanced field plate techniques to optimise power and efficiency at high drain bias operating conditions.

According to Yole Développement's latest MEMS report 'Status of the MEMS Industry', the MEMS industry is preparing to exceed $20bn by 2020 (in 2014 it represented an $11.1bn business for Si-based devices).

Qorvo has introduced RF Flex, the latest addition to its family of integrated 4G LTE RF front end solutions. Qorvo's RF Flex front end solutions offer performance and regional customisation to improve the performance and simplify the design of 4G smartphones and tablets.The first products in the RF Flex family include multi-band PA modules and transmit modules designed for the growing mid-tier segment of LTE smartphones, particularly in China.

Qorvo has expanded its RF Fusion family of complete RF Front End (RFFE) solutions, which combine power amplifier efficiency, filtering, duplexing and cellular switching to deliver excellent performance and enable a single scalable source for the entire cellular front end. RF Fusion has been selected to support multiple leading smartphones.

Qorvo has announced several high-performance RF filters that provide faster data throughput and longer battery life for next-gen 4G smartphones and other mobile devices. These latest additions to Qorvo's line of filters leverage the company's filter technologies to enhance the overall mobile user experience and optimise efficient use of limited spectrum.