Search results for "gallium nitride"

Many people are familiar with the negative effects hydrodynamic cavitation can have on bulk solid materials such as nautical propeller blades, fluid pump parts, and other manufacturing equipment.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, is attending the upcoming IEEE Applied Power Electronics Conference and Exposition (APEC) 2024.

Running in the background to the more visible, very real wars occurring around the world at present, there is another, economic and industrial in nature. This is a trade war between two principals: the USA and China. Leo Charlton, Technology Analyst at IDTechEx further discusses.

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has launched a new 100V bi-directional member of the company’s VGaN IC family.

Cambridge GaN Devices (CGD) has announced the second in its series of webinar tutorials targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices. At 6pm CET on Tuesday 14th March, CGD's Chief Technology Officer, Professor Florin Udrea will present on 'State-of-the-art architectures and future concepts in GaN technology for power electronics'. A Q&A session will follow.

The use of rare earths in various modern technology has drawn attention over the years. But with the rising demand for electric vehicles (EVs), the issue has been brought to the fore. Dr James Edmondson, Principal Technology Analyst at IDTechEx further explores.

Texas Instruments has announced that LITEON Technology has selected TI’s highly integrated gallium nitride (GaN) field effect transistor (FET) plus C2000TM real-time microcontrollers (MCUs) for its latest server power supply unit (PSU) for the North American market.

STMicroelectronics has introduced the ST-ONEHP integrated digital controller, the world’s first IC certified by USB-IF according to the USB Power Delivery Extended Power Range (USB PD 3.1 EPR) specification.

Cambridge GaN Devices (CGD) is presenting a new series of webinar tutorials, targeting designers, engineers and managers who are evaluating gallium nitride (GaN) power devices for their next activity. During this series, CGD's GaN experts will share their insights on GaN for efficient power conversion and how CGD's HV technology, ICeGaN, enables ease of use and delivers the highest performance. In the first instalment, 'Powering up The Future wit...

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has announced a new range of low voltage discrete HEMTs in FCQFN packaging.