Search results for "SiC MOSFET"
Dynamic test methods tailored to specific applications
In high-performance applications, the shift from silicon (Si) to silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is significant. However, testing and qualifying these wide-bandgap semiconductors pose new challenges.
Indium Corporation to present at PCIM Europe
Indium Corporation experts will share their technical insight and knowledge on a variety of industry-related topics throughout PCIM Europe, June 11-13, in Nuremberg, Germany.
Guerrilla RF acquires Gallium Semiconductor's GaN device portfolio
Guerrilla RF (GUER) has finalised the acquisition of Gallium Semiconductor's entire portfolio of GaN power amplifiers and front-end modules.
Trends and challenges in the era of wide bandgap semiconductors for power electronics
Keysight recently held a webinar titled: “Overcoming Design Challenges in the Era of Wide Bandgap Semiconductors,” in which valuable insights on the trends and challenges of power electronics were explored.
Infineon provides products for Xiaomi’s new SU7 smart EV
Infineon Technologies AG, a global semiconductor specialist in power systems and IoT, will provide silicon carbide (SiC) power modules HybridPACK Drive G2 CoolSiC and bare die products to Xiaomi EV for its recently announced SU7 until 2027.
CNIPA validates EPC's GaN gate semiconductor technology patent
Efficient Power Conversion (EPC) has announced that the China National Intellectual Property Administration (CNIPA) has validated the claims of EPC patent titled “Compensated gate MOSFET and method for fabricating the same” (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices.
SiC power equipment manufacturing
Investments and expansions at device, epiwafer, and wafer levels are driving growth in the multi-billion dollar SiC power market. Device manufacturers are constructing facilities in various regions.
Vishay unveils 600 V E Series Power MOSFET
Vishay Intertechnology has launched its inaugural fourth-gen 600 V E Series power MOSFET in the innovative PowerPAK 8 x 8LR package, aimed at telecom, industrial, and computing applications.
ROHM and Toshiba agree to collaborate in manufacturing power devices
A plan by ROHM and Toshiba Electronic Devices and Storage to collaborate in the manufacture and increased volume production of power devices has been recognised and will be supported by the Ministry of Economy, Trade and Industry as a measure supporting the Japanese Government’s target of secure and stable semiconductor supply.
Texas Instruments brings you the latest in Control Drive
Here, you’ll find a selection of the latest news, products, and articles from Texas Instruments focused on Control Drive.