Search results for "gan"

Cambridge GaN Devices (CGD) has signed a Memorandum of Understanding with Industrial Technology Research Institute (ITRI) of Taiwan to solidify a partnership in developing high performance GaN solutions for USB-PD adaptors.

IQE and X-FAB Silicon Foundries announce a Joint Development Agreement (JDA) to create a European-basedGaN power device platformsolution.

At the IEEE International Reliability Physics Symposium (IRPS) 2025, imec demonstrated that, despite their positive bias (on-state) instability, GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility Transistors) maintain consistent performance when operating within a well-defined range.

Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100V eGaN FET that delivers superior performance, higher efficiency, and lower system costs for power conversion applications.

Faster, smaller, and more efficient—SiC and GaN semiconductors are shaking up power electronics! From EVs to 5G, these tech wonders boost performance like never before. Ready to dive in? Explore the future of power and see what’s possible!

STMicroelectronicsandInnoscienceannounce an agreement on GaN technology development and manufacturing, leveraging the strengths of each company to enhance GaN power solutions and supply chain resilience.

Unlock high efficiency for your appliances with the TIDA-010236 reference design! This 4-kW continuous conduction mode (CCM) totem-pole PFC offers a peak efficiency of over 98.66% and power factor close to 1, thanks to the integration of gallium nitride (GaN) technology and TMS320F280025C digital controller. With full protection features for surge, AC drop, and conducted emissions, this design provides a robust, high-performance solution for your...

Nexperia has announced the addition of 12 new devices to its continuously expanding e-mode GaN FET portfolio.

Wise-integration will unveil its latest WiseGan and WiseWare advancements at APEC 2025 in Atlanta, featuring two technical presentations and demonstration boards, including a new 1.5kW Totem Pole PFC module designed specifically for server and industrial applications.

ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with excellent heat dissipation, high current capacity, and switching performance, the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems.