Search results for "gallium nitride"
Top 5 power products in February
Electronic Specifier walks through the top 5 power products released this February.
Reaching the next step for AI data centre PSUs
Power Supply Units (PSUs) play a critical role in ensuring the smooth operation of the data centres of today. As AI workloads become increasingly more mainstream and demanding, the need for efficient, reliable, and scalable PSUs has never been more important.
Infineon and Eatron extend collaboration
Infineon Technologies and Eatron extend their existing partnership forbattery management solutions(BMS) in automotive to a comprehensive BMS portfolio including various industrial and consumer applications.
Industry’s first space-grade 200V GaN FET gate driver
Texas Instruments (TI) has announced a new family of radiation-hardened and radiation-tolerant half-bridge gallium nitride (GaN) field-effect transistor (FET) gate drivers.
Infineon launches CoolGaN G3 in silicon-footprint packages
Gallium Nitride (GaN) technology plays a crucial role in enabling power electronics to reach the highest levels of performance. However, GaN suppliers have thus far taken different approaches to package types and sizes, leading to fragmentation and lack of multiple footprint-compatible sources for customers.
Infineon begins 200mm silicon carbide (SiC) rollout
Infineon, pioneers of 300mm GaN, has made significant progress on its 200mm silicon carbide (SiC) roadmap.
Why we need power electronics
Power electronics play a critical role in modern electrical and electronic systems. As the demand for efficient, reliable, and compact power conversion solutions continues to grow, power electronics serve as a fundamental technology across industries. From renewable energy integration to electric vehicles (EVs) and industrial automation, power electronics are essential for enabling energy efficiency, sustainability, and technological advancements...
PBDH0400 series high-voltage, wide-bandwidth differential probe
Yokogawa Test & Measurementannounces the release of its PBDH0400 series differential probe with a maximum input voltage of 2000V and a frequency bandwidth of 400MHz.
Infineon pioneers 300mm GaN wafers
Infineon Technologies recently announced the development of the world’s first 300mm power gallium nitride (GaN) wafer technology. Infineon is the first company that has managed to master this technology in a scalable high-volume manufacturing environment.
Infineon’s GaN predictions for 2025
Infineon has announced an analysis piece on its 2025 predictions for Gallium Nitride (GaN) semiconductors.