Search results for "d2pak"

Alpha and Omega Semiconductor Limited (AOS) announce the expansion of its package portfolio options for the second generation 650 to 1200V αSiC MOSFETs.

Nexperia has announced its industry-leading 1200 V SiC MOSFETs in D2PAK-7 packaging, offering a choice of 30, 40, 60, and 80 mΩRDSon values. These devices are the latest addition to a series that will see Nexperia'sSiC MOSFET portfolio rapidly expand to include devices with RDSon values of 17, 30, 40, 60, and 80 mΩ in various flexible package options.

Infineon Technologies is propelling motor drive applications into the future with its newly unveiled OptiMOS 6 200V MOSFET product line.

Infineon Technologies has unveiled its 750V G1 series of discrete CoolSiC MOSFETs, designed to cater to the growing requirements for enhanced efficiency and power density in both industrial and automotive power systems.

Infineon has launched a new generation of low ohmic high-side switches in a TO-leadless package, the Power PROFET + 12V switch family.

Since relays and fuses cannot meet the requirements of modern E/E vehicle architectures, partial or complete electrification of the primary and secondary power distribution must be taken into account.

Vishay’s Gen 3 650 V silicon carbide Schottky diodes feature a merged PIN Schottky (MPS) design.

Magnachip Semiconductor Corporation announced the launch of two new 150V MXT MV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), using its 8th-generation trench MOSFET technology.

Nexperia has introduced a 650V Silicon Carbide (SiC) Schottky diode designed for power applications which require ultra-high performance, low loss, and high efficiency.

Nexperia has announced the release of its first 80V and 100V application specific MOSFETs (ASFETs) for hotswap with enhanced safe operating area (SOA) in a compact 8x8mm LFPAK88 package.