Search results for "Hamamatsu"

Hamamatsu Photonics introduce a new design of back-thinned linear CCD image sensor. The S11155-2048 and S11156-2048 utilise a resistive gate structure, with “on chip” electronic shutter function, offering high speed readout with low image lag. With their back-thinned structure these CCDs offer a high sensitivity (> 80 % quantum efficiency) from the UV to the NIR region of the spectrum.

The fourth MOST Forum on March 20, 2012 in Stuttgart/Esslingen will celebrate a significant milestone of MOST Technology: with MOST150, the third MOST generation will go into series in 2012. Thus, for the first time, the MOST Ethernet channel will be used in practice to transmit IP data within the vehicle. MOST150 provides an automotive-ready physical layer for Ethernet protocols in addition to transporting high Quality of Service (QoS) audio and...

The second MOST Forum took place on March 23rd, 2010, in Frankfurt, Germany. 150 professionals from the automotive electronics industry and academia participated in the very informative conference and visited the accompanying exhibition. The broad international audience was composed of attendees from Europe as well as India, Japan, South Korea, and the United States.

Hamamatsu Photonics has introduced its high speed G10768-1024D InGaAs linear image sensors to meet increasing industrial requirements to measure foreign bodies on-line in the near infrared range (in the wavelength range from 800 nm to 1700 nm).

Hamamatsu Photonics introduce a new Photo IC, the S11049-02SB. This is a high performance sensor mounted into a compact single in-line package (SIP).

Hamamatsu Photonics introduced a back illuminated 16 channel photodiode array (PDA), designed for use in X-ray non-destructive testing applications. The S11212 uses flip-chip technology that allows the PDA to receive scintillation light from the back side of the array. This flip-chip approach reduces the need for gold bond wires and junction layers on the light input side, vastly reducing the risk of wire bond damage during scintillator mounting....

Hamamatsu Photonics introduced the new C11208 MPPC module which integrates the S11028 series MPPC, a pixelated silicon avalanche photodiode operated in Geiger-mode, with the addition of a high performance thermoelectric cooler. Along with the TE cooled MPPC, the module houses a current-to-voltage converter, high speed comparator, high voltage power supply circuit, temperature control and counting circuits as well as a micro controller.

Hamamatsu Photonics introduce the new C9405CB spectrometer. This new TM spectrometer module utilises a transmission grating and a new ultra high sensitivity IR Enhanced CCD developed by Hamamatsu. By utilising Hamamatsu’s unique technology in laser processing, it is possible to form a MEMS structure on the back side of the CCD, which results in a greatly increased sensitivity at wavelengths longer than 800 nm. The CCD within the C9405CB feature...

Hamamatsu Photonics introduced the G11097-0606S, a brand new two dimensional InGaAs image sensor that compliments the existing range of high performance linear image sensors. The G11097-0606S consists of a CMOS readout integrated circuit (ROIC) and a back illuminated InGaAs photodiode array, which are connected via indium bumps on a hybrid structure. The G11097-0606S features simultaneous charge integration and a 5MHz video data rate. Also includ...

Hamamatsu Photonics introduce a new range of silicon detectors and image sensors that offer enhanced near-infrared sensitivity. Using unique laser processing technology, MEMS structures can be fabricated on the silicon surface which act to reduce reflections and increase the surface area of the active element. This process drastically increases the sensitivity in wavelengths longer than 800nm.