Search results for "diodes"
Molex launches SolarSpec Junction Box for Silicon Photovoltaic (PV) Solar Panels
Molex has released the SolarSpec Junction Box and Cable Assemblies designed for installation on the back of mono- and polycrystalline photovoltaic (PV) solar modules. These products provide the interface between the conductor ribbons on the panel and the DC I/O cables. Molex SolarSpec solutions are specifically designed for applications in the solar and renewable energy industry.
Molex launches SolarSpec Junction Box for Thin-Film Photovoltaic Solar Panels
Following the successful introduction of the SolarSpec Junction Box for automated installation on the back of silicon photovoltaic (PV) solar modules, Molex Incorporated introduces a junction box designed specifically to meet the growing demand for solar thin-film photovoltaic (PV) panels. The SolarSpec Junction Box from Molex provides the interface between the conductor ribbons on the PV module and the external DC I/O cables.
Power MOSFETs in Compact SC-70 Package Offer Half the Size of TSOP-6
Vishay Intertechnology has announced the release of 15 new power MOSFETS in a PowerPAK SC-70 package measuring 2mm by 2mm with a low 0.8-mm profile. The new offering includes a variety of configurations and voltage ratings for different applications, including single, single plus Schottky, and dual devices, in both n-channel and p-channel, in addition to n- and p-channel complementary pairs. The devices feature voltage ranges between 8V and 30V w...
New 638nm Red Laser Diode with the World’s Highest Output Power of 500mW by Mitsubishi Electric
Mitsubishi Electric is introducing a new red laser diode, dubbed the ML520G72. It offers the world’s highest output power compared to all laser diodes in the 638nm wavelength region and so it is perfectly suited to pico projector applications or other portable display systems requiring a red light source with high brightness. The ML520G72’s output power of 500mW helps with the design of high-luminous LD-based projectors and can provide a lumi...
Mitsubishi's Laser Diode claims World’s Highest Output Power
Offering what the company says is the world’s highest output power of 110mW CW at 638nm in stable lateral single-mode, the new laser diode developed by Mitsubishi Electric Corporation offers the best power performance in its class. It is therefore predestined for use in mobile projectors, laser show equipment, and instrumentation applications as well as in the biomedical fields.
Vishay - Four 45 V TMBS Trench MOS Barrier Schottky Rectifiers for Solar Bypass Applications in SMPC and Axial-Leaded Packages
Vishay today expanded its TMBS Trench MOS Barrier Schottky rectifiers for solar bypass applications with four new 45 V devices offering eSMP® surface-mount and axial-leaded package options. The devices released today are designed to enable higher current densities in low-voltage, high-frequency inverters, and solar cell junction boxes, where they will be used as bypass diodes for photovoltaic solar cell protection.
Vishay - 12 New 45 V TMBS Trench MOS Barrier Schottky Rectifiers in Power TO-220AB, ITO-220AB, and TO-263AB Packages for PV Solar Cell Bypass Protection
Vishay has expanded its offering of TMBS Trench MOS Barrier Schottky rectifiers with 12 new 45 V devices in three power package options that feature a wide range of current ratings from 10 A to 60 A. With extremely low forward voltage drops down to 0.33 V typical at 10 A, the rectifiers are optimized for use in solar cell junction boxes as bypass diodes for protection.
ON Semiconductor expands technologies for military and aerospace markets with discrete semiconductors qualified to MIL-PRF-19500
Target applications for new small signal transistors include switching and linear amplification in missile guidance, munitions, radio communications, and commercial and military avionics systems
ON Semiconductor Releases New Master Components Selector Guide
ON Semiconductor has published the latest edition of its Master Components Selector Guide. This 370-page document has comprehensive specification data for the company’s entire portfolio of components and the various package types they are offered in.
ON Semiconductor Extends High-Voltage Power Solutions Offerings with 30 Volt N-Channel Power MOSFETs with Integrated Schottky Diodes
ON Semiconductor has broadened its portfolio of N-channel power MOSFET devices with the introduction of new 30 V products with integrated Schottky diodes. The NTMFS4897NF, NTMFS4898NF and NTMFS4899NF have maximum RDS(on) values of 2 mΩ, 3 mΩ and 5 mΩ respectively at 10 V, optimized for synchronous side in buck converter applications to achieve higher power efficiency. Typical gate charge specifications of 39.6 nC, 25.6 nC and 12.2 nC respec...