Search results for "mosfet"

Nexperia has announced two enhancements to its extensive Zener diode portfolio that both eliminate undesirable overswing and noise behaviour.

Following his achievement of the 2024 Millennium Technology Prize, Electronic Specifier recently spoke with the inventor of the IGBT, Professor Bantval Jayant Baliga, on what it means to him and what he hopes to see in the future.

Navitas Semiconductor has announced the launch of its third-generation automotive-qualified SiC MOSFETs, available in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages.

The 2024 Millennium Technology Prize has been awarded to Professor Bantval Jayant Baliga of North Carolina State University for his groundbreaking innovation, the commercialisation of the Insulated Gate Bipolar Transistor (IGBT) which has significantly reduced global electrical energy consumption and fossil fuel use.

Here, you’ll find a selection of the latest news, products, and articles from Texas Instruments focused on the Automotive industry.

Nexperia announced a broadening of package options for its NextPower 80/100V MOSFETs portfolio, previously only available in LFPAK56E, to now also include LFPAK56 and LFPAK88 packaging.

Toshiba has introduced a new series of N-channel power MOSFETs, supporting energy conservation.

With wide bandgap semiconductors like Gallium Nitride (GaN) and Silicon Carbide (SiC) growing in popularity, it begs the question: GaN or SiC?

The UCC5880-Q1 device is an isolated, highly configurable adjustable slew-rate gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections such as shunt resistor based over-current, overtemperature (PTC, NTC, or diode), and DESAT detection, including selectable soft turn-off or twolevel soft turn-off during these faults.

Pulsivhas unveiled a 65W USB-C GaN optimised reference design, which claims to be among the world’s most efficient.