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One of the pioneers of GaN technology, Geoff Haynes, who co-founded GaN Systems Inc. is joining QPT’s team as an advisor.

Farnell has bolstered its inventory of XP Power products, providing customers with access to a selection of 5000 items for next-day delivery.

During this year’s PCIM Europe in Nuremberg, Germany, June 11th – 13th, ROHM will present its new power semiconductor solutions with a special focus on wide bandgap devices.

Farnell has strengthened its stock of XP Power products to now offer customers access to 5,000 products available for next day delivery.

In high-performance applications, the shift from silicon (Si) to silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is significant. However, testing and qualifying these wide-bandgap semiconductors pose new challenges.

Keysight recently held a webinar titled: “Overcoming Design Challenges in the Era of Wide Bandgap Semiconductors,” in which valuable insights on the trends and challenges of power electronics were explored.

Kubos Semiconductors, a microLED material technology firm, has secured a funding round of $2 million to accelerate the advancement of its cubic GaN technology, aimed at enhancing the efficiency of red microLEDs.

The LMG3100 device is a 90V, 97A Gallium Nitride (GaN) with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without needing an additional level shifter.

Here, you’ll find a selection of the latest news, products, and articles from Texas Instruments focused on High Voltage.

The TMS320F2838x (F2838x) is a member of the C2000 real-time microcontroller family of scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching frequencies, and supporting the use of GaN and SiC technologies.