Search results for "SiC MOSFET"

Qorvo announced the industry's first 4 milliohm silicon carbide (SiC) junction field-effect transistor (JFET) in a TOLL package.

ROHM has announced the launch of its new EcoSiC brand. EcoSiC is a trademark for ROHM products using the advanced material silicon carbide (SiC).

The TMS320F2838x (F2838x) is a member of the C2000 real-time microcontroller family of scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching frequencies, and supporting the use of GaN and SiC technologies.

As PCIM 2024 kicks off, addressing SiC & GaN test & measurement (T&M) concerns is one of the many topics taking centre stage, with companies like Rohde & Schwarz revealing new products that address these problems.

Rohde & Schwarz is giving a sneak peek at its next generation R&S RT-ZISO isolated probing system at PCIM Europe in Nuremberg (June 11-13).

Texas Instruments (TI) has introduced the industry’s first 650V three-phase GaN IPM (Integrated Power Module) for 250W motor drive applications on the opening day of the PCIM exhibition in Nuremberg (June 11-13).

Applied EV recently announced its selection of CISSOID's latest CXT-ICM3SA series of Silicon Carbide Inverter Control Modules (ICMs) to power their newest generation of autonomous vehicle E-motors.

PowerUP Asia 2024, a two-day virtual conference focused on power semiconductor technologies and industry developments in Asia, opens tomorrow, June 11.

Infineon introduced the 600V CoolMOS S7TA Superjunction MOSFET for automotive power management applications.

Alpha and Omega Semiconductor Limited (AOS) announce the expansion of its package portfolio options for the second generation 650 to 1200V αSiC MOSFETs.