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A 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications has been introduced by MACOM. This transistor is available in standard flange or earless flange packaging. The MAGX-000912-650L00/MAGX-000912-650L0S is a gold metallised, internally matched, GaN on SiC depletion mode RF power transistor.

CS International hit a new high by assembling its strongest ever line-up of speakers. At the meeting, more than 300 delegates gained great insight into the potential of various aspects of the compound semiconductor industry, thanks to presentations from seven leading market analysts.

ON Semiconductorwill showcase some of its latest advances in power management technology at APEC 2015, including an LLC current-mode power supply for computers and LED TVs, developments in GaN, and a sensor-less motor driver controller.Additionally, ON Semiconductor technical experts will giveProfessional Education Seminars at APEC as part of the conference agenda.

At PCIM Europe 2015, taking place from 19thto21stMay in Nuremberg, about 400 exhibitors will present their latest products, solutions and innovations to an international specialist audience. With the global players of the industry, as well as numerous new exhibitors, PCIM Europe can once more prove its relevance as the internationally leading meeting point for the power electronics community.

Cree is exhibiting and speaking at this year’s GOMACTech (Government Microcircuit Applications and Critical Technology Conference), which will take place on the 23rd to 26th of March in St. Louis, Missouri.

Power electronics based on GaN and SiC have the potential to significantly improve efficiency. But since these materials are higher-cost, companies need market-specific strategies in order to succeed, as these Wide-BandGap (WBG) materials claim market share from silicon-based semiconductors, according toLux Research.

GOEPEL electronics has developed a new rack-mountable SCANFLEX TAP transceiver which enables testing and programming of multiple units under test (UUT), using 16 parallel test access ports (TAP). The space- and power-saving SFX-TAP16/G-RM-FXT allows the use in the production line as well as in applications with large distances to the target.

Avago hasannounced two sets of high speed gate drive optocoupler devices, the ACPL-P/W347 and ACPL-P/W349. These devices are 1.0A and 2.5A gate drive optocouplers designed to protect and drive fast switching next-gen power semiconductors like SiC and GaN MOSFETs and IGBTs in applications such as power inverters, motor drives, and switching power supplies.

GaN Systems is stepping up its sales effort in Europe. It has signed a distribution agreement with Ecomal Europe to promote and distribute its gallium nitride (GaN) high power switching transistors. The partnership is seen as synergistic by both GaN Systems and Ecomal Europe, as many of GaN Systems’ prospective customers in the region already have a relationship with Ecomal Europe.

Plessey presented its LED technology and the commercialisation of GaN-on-Silicon at the fifth CS International. The conference provided an up-to-date overview with comprehensive coverage of every important sector within the compound semiconductor industry.