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A range of Gallium Nitride (GaN) on Silicon (Si) epi-wafers that meet industrial specifications for HEMT devices at 650V will be demonstrated by EpiGaN at PCIM Europe.The company will be situated at booth 6-432.

To strenghthen and improve timing design and verification for automotive Ethernet and multicore systems, Symtavision has launched SymTA/S 3.7. It introduces new Ethernet timing design and verification features including the modeling and analysis of dynamic data chains and data dependent dynamic Ethernet frame packing. It also has faster system distribution analysis compared to previous versions.

GaN Systems is participating in what promises to be a lively debate on one of the hottest topics at APEC 2015. Wide Bandgap Semiconductor devices in Power Electronics – Who, What, Where, When and Why?will be hosted and led by Kevin Parmeter, Vice President of Applications, Excelsys, and will see panellists from device manufacturers joining power electronics design engineers to air their views.

Cree has released an application note describing the accuracy of its large signal models for RF power transistors, which allow RF design engineers to reduce PA design iterations, design time and development costs.

Characterised by low losses at high frequencies, the N59 ferrite material has been introduced by TDK. The material was developed specifically for power supplies and frequency converters that operate with fast-switching power semiconductors on a GaN basis. Optimised for a frequency range from 700kHz to 2MHz, the ferrite material reaches its maximum transmissible power at a switching frequency of 2MHz and an operating temperature of 100°C. The ...

Infineon Technologies has announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio. The company now offers both enhancement mode and cascode configuration GaN-based platforms optimised for high performance applications requiring superior levels of energy efficiency including Switch Mode Power Supplies (SMPS) used in servers and telecomms, and consumer goods such as Class D Audio systems. GaN technology sign...

From APEC 2015, Transphorm has announced that it is now offering engineering samples of its TPH3205WS transistor, the first 600V GaN transistor in an TO-247 package. Offering resistance of 63 mΩ and 34A ratings, the device utilises the company’s Quiet Tab source-tab connection design, which reduces EMI at high dv/dt to enable low switching loss and high-speed operation in power supply and inverter applications.

ON Semiconductorand Transphorm have announced theNTP8G202N(TPH3202PS) andNTP8G206N (TPH3206PS) 600V GaN cascode transistors and a 240W reference design that utilises them.With typical RDS(ON)values of 150 and 290mΩ, the products are offered in a TO-220 package for easy integration with existing PCB manufacturing capabilities.Both products have been qualified to JEDEC standards and are in mass production.

Plessey Semiconductors has announced that it will be featured on a website showcasing 21st century British manufacturing, launching 23rd April. www.madeherenow.com, the brainchild of former Financial Times Manufacturing, Editor Peter Marsh, is looking to tell the story of modern-day industry through a series of articles, pictures and videos about four exemplar companies.

An 80V, 10A integrated GaN FET power stage prototype, claimed to be the industry’s first, has been released by Texas Instruments. The LMG5200 consists of a high-frequency driver and two GaN FETs in a half-bridge configuration.The GaN FET power stage will help accelerate market adoption of next-gen GaN power-conversion solutions that provide increased power density and efficiency in space-constrained, high-frequency industrial and telecomms ...