Search results for "SiC MOSFET"

Toshiba has added two new 150V N-channel power MOSFET products based upon their latest generation U-MOS X-H Trench process.

A new, digitally controlled hybrid energy storage system (HESS) can double the service life of a battery and improve the temperature behaviour of the overall system, for example to support fast charging. The patented system was developed by Rutronik together with the West Saxon University of Applied Sciences in Zwickau.

The traction inverter is the main power processing system in an electric vehicle. The real time control of this power processing block being a critical task, needs a microcontroller unit (MCU) with low latency peripherals and deterministic processing time.

Würth Elektronikoffers itsWE-MXGI– a power inductor with unprecedented properties.

TIDM-02014 is a 800-V, 300kW SiC-based traction inverter system reference design developed by Texas Instruments and Wolfspeed provides a foundation for OEMs and design engineers to create high-performance, high-efficiency traction inverter systems and get to market faster.

SiCrystal has announced the creation of a new additional production space in the northeast of Nuremberg, directly opposite the existing site.

Vishay Intertechnology has introduced 16 new Gen 3 1200 V silicon carbide (SiC) Schottky diodes.

Mouser Electronics is now stocking the ACS37030 and ACS37032 current sensors from Allegro MicroSystems.

At the PCIM Europe event in Nuremberg, ASMPT showcased a comprehensive power module manufacturing solution.

Heraeus Electronics is pleased to announce its involvement in the FastLane project, a forward-thinking EU-funded initiative dedicated to transforming the European value chain for Silicon Carbide (SiC)-based power electronics.