Search results for "SiC MOSFET"

Renesas Electronics, a premier supplier of advanced semiconductor solutions, announces that it has completed the acquisition of Transphorm, a global specialist in gallium nitride (GaN) power semiconductors, as of 20thJune 2024.

The topic of smart cities is becoming increasingly important in many municipalities. The digitalisation of infrastructure is intended to provide new insights and continuously improve the quality of life for citizens.

STMicroelectronics has commenced production of automotive high-side power switches featuring proprietary intelligent fuse protection and a Serial Peripheral Interface (SPI) for diagnostic data, enhancing resilience, and functional safety.

With PCIM Europe 2024 now behind us, what better time to look back at the trends, innovations, and discussions happening within the power electronics industry.

Infineon Technologies introduces the 600V CoolMOS 8 high voltage superjunction (SJ) MOSFET product family.

SemiQ has added 1700V SiC Schottky discrete diodes and dual diode packs to its QSiC product line.

Cambridge GaN Devices (CGD) has launched its lowest ever on-resistance (RDS(on)) parts.

Qorvo announced the industry's first 4 milliohm silicon carbide (SiC) junction field-effect transistor (JFET) in a TOLL package.

ROHM has announced the launch of its new EcoSiC brand. EcoSiC is a trademark for ROHM products using the advanced material silicon carbide (SiC).

The TMS320F2838x (F2838x) is a member of the C2000 real-time microcontroller family of scalable, ultra-low latency devices designed for efficiency in power electronics, including but not limited to: high power density, high switching frequencies, and supporting the use of GaN and SiC technologies.