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ADL Embedded Solutions has announced the design-in success of the “Ramet” project (use of PCIe/104 in harsh environments). Ramet opts for ADL’s PCIe/104 ADLE3800PC-E3845 SBC for the control and evaluation of its speed monitoring systems of the RAMER 10 family, which consists of compact modular radar cameras featuring Doppler radar with 34.0, 34.3 or 24.125GHz.

Topside cooling, first announced by GaN Systems in March, has been used in the GS66516T 650V E-Mode power switch, which is claimed to have the highest current capability available at 60.

Plessey Semiconductors announced that it will be leading a £1.3m government funded project in conjunction with AIXTRON and Bruker Nano Surfaces Division. This project will accelerate high volume manufacturing of Plessey's innovative LEDs created withGaN-on-SiC technology at its Devon based manufacturing site.

The latest research from the Niels Bohr Institute shows that LEDs made from nanowires will use less energy and provide better light. The researchers studied nanowires using X-ray microscopy, a method with which they can pinpoint exactly how the nanowire should be designed to give the best properties. The results are published in the scientific journal, ACS Nano.

GaN Systems is showcasing three customer applications incorporating its Island Technology devices for the first time on its stand at PCIM Europe. The customer products being displayed are finished production items. Each has been designed by the customer to bring the unique benefits offered by GaN Systems’ broad product range of small highly-efficient, industrial-scale power switching transistors to its particular market.

Machine builder Fives Cincinnati finds Kennametal’s KM4X spindle connection key to achieving new levels of metal removal on industry-leading “super-profilers”

Min demonstrates TI's LM5114 single 7.6A peak current low-side gate driver for MOSFETs as well as enhancement mode GaN (eGaN) FETs and ultra-efficient, small-footprint power supplies.

The developer of gallium nitride power switching semiconductors,GaN Systems, has announced a $20m venture capital financing. Cycle Capital Management led the round and was joined by BDC Capital and Tsing Capital, as well as existing investors Chrysalix Energy Venture Capital and RockPort Capital.

GaN Systems is presenting a paper titled The Automotive Market Opportunity for GaN at the PCIM Europe Conference in Nuremberg. The presentation will be given by thePresident, GaN Systems,Girvan Pattersonon 20th May at 11.00am during a special session in the Brüssel Room chaired by Achim Scharf from Techmedia International.

IDT has announced its collaboration with Efficient Power Conversion to develop technology based on GaN, a semiconductor material widely recognised for its speed and efficiency. Under their collaboration, the companies will explore integrating EPC’s eGaN technology with leading IDT solutions.