Search results for "SiC MOSFET"
TIDM-02014 by Texas Instruments
High-power, high-performance automotive SiC traction inverter reference design.
Dynamic test methods tailored to specific applications
In high-performance applications, the shift from silicon (Si) to silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is significant. However, testing and qualifying these wide-bandgap semiconductors pose new challenges.
3rd gen SiC MOSFETs with reduced switching losses
Toshiba Electronics has launched the TWxxxZxxxC series of 10 silicon carbide (SiC) MOSFETs based upon their third-generation technology.
Indium Corporation to present at PCIM Europe
Indium Corporation experts will share their technical insight and knowledge on a variety of industry-related topics throughout PCIM Europe, June 11-13, in Nuremberg, Germany.
Guerrilla RF acquires Gallium Semiconductor's GaN device portfolio
Guerrilla RF (GUER) has finalised the acquisition of Gallium Semiconductor's entire portfolio of GaN power amplifiers and front-end modules.
Trends and challenges in the era of wide bandgap semiconductors for power electronics
Keysight recently held a webinar titled: “Overcoming Design Challenges in the Era of Wide Bandgap Semiconductors,” in which valuable insights on the trends and challenges of power electronics were explored.
Infineon provides products for Xiaomi’s new SU7 smart EV
Infineon Technologies AG, a global semiconductor specialist in power systems and IoT, will provide silicon carbide (SiC) power modules HybridPACK Drive G2 CoolSiC and bare die products to Xiaomi EV for its recently announced SU7 until 2027.
CNIPA validates EPC's GaN gate semiconductor technology patent
Efficient Power Conversion (EPC) has announced that the China National Intellectual Property Administration (CNIPA) has validated the claims of EPC patent titled “Compensated gate MOSFET and method for fabricating the same” (Chinese Patent No. ZL201080015425.X) for enhancement-mode GaN semiconductor devices.
New QSiC 1200V SOT-227 SiC modules advancing energy standards
SemiQ recently announced the expansion of its QSiC silicon carbide module portfolio. The launch includes a new series of 1200V MOSFETs, available both with and without 1200V SiC Schottky Diodes, packaged in SOT-227.
SiC power equipment manufacturing
Investments and expansions at device, epiwafer, and wafer levels are driving growth in the multi-billion dollar SiC power market. Device manufacturers are constructing facilities in various regions.