Search results for "Hamamatsu"
Hamamatsu Introduces a New Streak Camera for UV to NIR Measurements
Hamamatsu Photonics introduces a new streak camera series for UV to near-infrared measurements of extremely fast light phenomena. The C10910 series simultaneously delivers intensity vs. time vs. position (or wavelength) information with single-photon sensitivity and temporal resolution down to 1 ps. With such capabilities, these streak cameras are suitable for measuring fast fluorescence lifetimes, response times of quantum devices, electron bunc...
Hamamatsu Photonics Optical Switch Photo IC
Hamamatsu Photonics introduce a new Photo IC, the S11049-02SB. This is a high performance sensor mounted into a compact single in-line package (SIP).
Thumb-Sized MOEMS Mini-Spectrometer for Visible Light Spectrometry
Hamamatsu Photonics has introduced the C10988MA, an ultra-compact spectrometer built using MOEMS technology. The C10988MA is a thumb-sized device, measuring only 27.6 x 13 x 16.8 mm, developed for use in portable and hand-held devices, where a standard mini-spectrometer would be too large and consume too much power. Not only small, but the C10988MA is also light, weighing only 9 grams.
Wide Spectral Response InGaAs PIN Photodiode
Hamamatsu Photonics has introduced the G10899 series of InGaAs PIN photodiodes, featuring a very wide spectral response range of 0.5 to 1.7 µm. Standard InGaAs PIN photodiodes only offer a useful response range from 0.9 to 1.7 µm, with silicon photodiodes being used to cover from 400 nm to 1.1 µm. The new G10899 can provide the end user with the ability to implement only one detector, where in the past they might need two.
Spectroscopic Back Thinned CCD Image Sensors with Improved Etaloning Effect for Medical Applications
Hamamatsu Photonics has introduced the new high-speed S11071 series, with vastly reduced etaloning effect, the latest addition of brand new high performance, cost effective back thinned CCD image sensors. Hamamatsu Photonics back thinned CCD technology has long been used in the development of high end analytical and medical instruments. The back thinned technology provides excellent sensitivity in the UV and blue end of the spectrum, combined wit...
I2C Interface-Compatible Colour Sensor Photo IC
Hamamatsu Photonics introduce a new RGB colour sensor Photo IC, the S11059-78HT. The new device features I2C compatibility and uses a small and highly reliable WL-CSP (Wafer Level – Chip Size Package).
Hamamatsu Photonics IR-Enhanced Silicon Avalanche Photodiodes
Hamamatsu Photonics introduce a new range of silicon detectors and image sensors that offer enhanced near-infrared sensitivity. Using unique laser processing technology, MEMS structures can be fabricated on the silicon surface which act to reduce reflections and increase the surface area of the active element. This process drastically increases the sensitivity in wavelengths longer than 800nm.
Miniature High Power UV Fibre Light Sources
Hamamatsu Photonics has introduced the new miniature, high power UV fibre light source, also known as the “S2D2”. The new L10671 features a brand new high performance 10 Watt Deuterium lamp, providing high radiant intensity and very high stability of 0.004 % (which is comparable to Hamamatsu’s industry leading 30 Watt D2 lamps).
Hamamatsu Introduces a New Streak Camera for UV to NIR Measurements
Hamamatsu Photonics introduces a new streak camera series for UV to near-infrared measurements of extremely fast light phenomena. The C10910 series simultaneously delivers intensity vs. time vs. position (or wavelength) information with single-photon sensitivity and temporal resolution down to 1 ps. With such capabilities, these streak cameras are suitable for measuring fast fluorescence lifetimes, response times of quantum devices, electron bunc...
High Speed Hybrid Photodetector Module
Hamamatsu Photonics introduced a hybrid photodetector module, the H10777. The hybrid photodetector (HPD) dispenses with the traditional metal dynodes found within a conventional photomultiplier tube (PMT) and instead photoelectrons are accelerated in a high electric field onto a silicon avalanche diode target, which is connected to form the cathode/output of the device.