Search results for "gan"

Believed to be the first GaN power ICs, Navitas introduces its ICs, based on its proprietary AllGaN monolithically-integrated 650V platform. They combine GaN power FETs with GaN logic and drive circuits, claimed to enable 10 to 100 times higher switching frequency than exisiting silicon circuits.

Ampleon announced its participation at the forthcoming Electronic Design Innovation Conference - EDI CON – held in Beijing between 19th to 21st April, 2016. At their booth, number 607, Ampleon will showcase demonstrations of a plasma light module developed by Luma in collaboration with Ampleon and, a new recently announced solid state oven developed by Midea in collaboration with Ampleon, in addition to a number of GaN and LDMOS RF power tr...

Researchers from the Schepens Eye Research Institute of Massachusetts Eye and Ear/Harvard Medical School have developed a smartphone application that projects a magnified smartphone screen to Google Glass, which users can navigate using head movements to view a corresponding portion of the magnified screen. They have shown that the technology can potentially benefit low-vision users, many of whom find the smartphone’s built-in zoom feature ...

Qorvo has added ten DOCSIS 3.1-ready reverse path amplifiers to its portfolio, enabling cable broadband service providers with the fastest data rate capabilities required for high-bandwidth content uploading. Qorvo's products for HFC and FTTH applications include the RFCA8830 and RFCA1008 reverse path power amplifiers capable of operating up to 300MHz – well beyond the current return path requirement of 204MHz.

Plessey has announced that it has signed a global exclusive license agreement to manufacture and sell the PhytoLux horticultural lighting solutions. Plessey has taken on the operational, technical and commercial activities of PhytoLux. This collaboration combines the best of British design engineering to provide world-class LED plant growth lighting solutions for the global market.

How to design ‘well-behaved’ high side gate drive circuits, by Paul Lee, Murata Power Solutions. The MGJ series, for example, has options for +15 or +20V. IGBTs and GaN MOSFETS will be fully ‘on’ with 15V drive but typical SiC MOSFETS may need closer to 20V for full enhancement.

The consistent purity of materials used to fabricate components of electronic devices can have a critical impact on their performance. For example, producing semiconductor-grade silicon used for electronic chips involves upstream cleaning of polysilicon chunks to a purity of has high as 11N, which translates to 99.999999999%.For photovoltaic applications such as solar cells, the silicon purity levels are not quite as high (5N) but critical to pro...

The new IsoVu technology from Tektronix will feature at the APEC 2016 show (March 20-24) in Long Beach, California. It will offer complete galvanic isolation between a device under test (DUT) and an oscilloscope through the use of electro-optical sensors. Tektronix says it will be the industry’s first measurement solution capable of accurately resolving high bandwidth differential signals in the presence of large common mode voltage.

M/A-COM Technology Solutions has announced its highly-anticipated MAGb series of GaN power transistors for use in wireless macro basestations. Leveraging MACOM’s Gen4 GaN technology, the new MAGb series is the industry’s first commercial basestation-optimised family of GaN transistors to achieve leadership efficiency, bandwidth and power gain with a linearity and cost structure like LDMOS and a path to better than LDMOS cost at scaled...

Thousands of electrical components make up today's most sophisticated systems – and without innovative cooling techniques, those systems get hot. Lockheed Martin is working with the DARPA Microsystems Technology Office (MTO) on its ICECool-Applications research program that could ultimately lead to a lighter, faster and cheaper way to cool high-powered microchips – by cooling the chips with microscopic drops of water.