Search results for "Vishay"

A power MOSFET with what is claimed to be the industry’s lowest on-resistance for a 60-V device in a package with double-sided cooling was released today by Vishay. The new SiE876DF, which comes in an SO-8 sized PolarPAK package, boasts maximum on-resistance of 6.1 milliohms at a 10-V gate drive, a 13 % improvement over the next best comparable device on the market.

Vishay Intertechnology, Inc. today released the industry's first 30-V p-channel power MOSFET in the SO-8 footprint area to boast maximum on-resistance down to 2.6 mΩ at a 10-V gate drive and 3.75 mΩ at 4.5 V. With these specifications, the new Vishay Siliconix Si7145DP, latest member of the TrenchFET Gen III p-channel family, achieves the lowest on-resistance ever for this voltage rating and footprint.

Vishay has released a series of low-profile surface-mount rectifiers with ESD protection to 25 kV. The new MSE1Px devices are offered in an eSMP series MicroSMP package with footprint dimensions of just 2.5 mm by 1.3 mm with a height profile of 0.65 mm. In addition to their ESD capabilities, the new devices feature a rugged maximum junction temperature of 175 °C and an MSL moisture sensitivity level of 1.

Vishay Intertechnology has announced an integrated DrMOS solution providing high-side and low-side n-channel MOSFETs plus a full-featured MOSFET driver IC, all in a single PowerPAK MLF6x6 package. Available in two versions tailored for 3.3-V or 5-V controllers respectively, the new SiC769 is fully compliant with the DrMOS specification for voltage regulators (VRs) in servers and desktop computers, graphics boards, workstations, game consoles, and...

Vishay Intertechnology has released new 20-V and 30-V p-channel TrenchFET power MOSFETs with a ±20-V gate source voltage that offer the industry’s lowest on-resistance for their device types in the SO-8 footprint.

Vishay Intertechnology has announced a 20-V n-channel power MOSFET plus Schottky diode. Featuring the 1.6-mm by 1.6-mm thermally enhanced PowerPAK SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32 V at 100 mA and a MOSFET with on-resistance ratings specified at gate drives down to 1.5 V.

Vishay Intertechnology has added to its family of current limit protection load switches with the release of a new protected high-side load switch that can operate under a supply voltage range of 2.4 V to 5.5 V and handle a continuous output current of 1 A.

Vishay Intertechnology has announced the industry’s first 190-V n-channel power MOSFET plus co-packaged 190-V power diode with a compact 2-mm by 2-mm footprint and an ultra-thin 0.75-mm profile. Offered in the PowerPAK SC-70 package, the SiA850DJ is also the industry’s first such device with an on-resistance rating at1.8-V VGS.

Vishay Intertechnology (NYSE: VSH) today introduced six new FRED Pt hyperfast rectifiers for consumer electronics applications. The new 600-V, 8-A devices feature an ultra-low typical voltage drop of 1 V at rated current, fast recovery times as low as 16 ns in hard switching conditions, and typical leakage current at 125 °C as low as 30 µA.

Vishay Intertechnology today released four new 600-V MOSFETs that extend its Super Junction FET technology to the TO-220, TO-220F, TO-247, and TO-263 packages.