Search results for "vishay"
Vishay Releases Analog Multiplexers and Switches With Ultra-Low Charge Injection Less Than 1.0pC and Low Switching Capacitance
Vishay Intertechnology has released eight new high-frequency, low-charge-injection analog multiplexers and switches for precision instrumentation applications. They are also the first devices of their kind to be offered in the leadless 1.8-mm by 2.6-mm miniQFN package, in addition to the standard TSSOP and SOIC packages.
Vishay Siliconix Low-Voltage Analog Switches Feature Low On-Resistance Down to 0.6 Ω Maximum at 2.7 V in Space-Saving miniQFN Packages
Vishay released three new dual single pole double throw (SPDT) and dual double pole double throw (DPDT) CMOS low-voltage analog switches. The devices combine low-voltage operation and low on-resistance in small miniQFN packages for audio, SIM card, and multi-purpose signal switching in space-constrained portable end products.
Monolithic Power MOSFET and Schottky Diode from Vishay
Vishay Intertechnology has announced the release of the industry's first 30-V monolithic power MOSFET and Schottky diode to be offered in a package with top and bottom heat dissipation paths for top performance in systems with forced air cooling. Offered in the PolarPAK package with double sided cooling, the new SkyFET SiE726DF device offers increased efficiency for high-current and high-frequency applications.
Vishay Siliconix 20-V P-Channel TrenchFET MOSFET Offers Industry’s Lowest On-Resistance
Vishay today introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK SC-70. The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technolog...
Power MOSFET with Industry-First 6.1 Milliohms On-Resistance in SO-8 Size Package
A power MOSFET with what is claimed to be the industry’s lowest on-resistance for a 60-V device in a package with double-sided cooling was released today by Vishay. The new SiE876DF, which comes in an SO-8 sized PolarPAK package, boasts maximum on-resistance of 6.1 milliohms at a 10-V gate drive, a 13 % improvement over the next best comparable device on the market.
Vishay Siliconix 30-V P-Channel TrenchFET Gen III Power MOSFET Sets New Industry First with 2.6-mΩ Maximum On-Resistance in SO-8 Footprint Area
Vishay Intertechnology, Inc. today released the industry's first 30-V p-channel power MOSFET in the SO-8 footprint area to boast maximum on-resistance down to 2.6 mΩ at a 10-V gate drive and 3.75 mΩ at 4.5 V. With these specifications, the new Vishay Siliconix Si7145DP, latest member of the TrenchFET Gen III p-channel family, achieves the lowest on-resistance ever for this voltage rating and footprint.
Vishay - Low-Profile Rectifiers Feature ESD Protection to 25 kV in MicroSMP Package with 0.65-mm Height
Vishay has released a series of low-profile surface-mount rectifiers with ESD protection to 25 kV. The new MSE1Px devices are offered in an eSMP series MicroSMP package with footprint dimensions of just 2.5 mm by 1.3 mm with a height profile of 0.65 mm. In addition to their ESD capabilities, the new devices feature a rugged maximum junction temperature of 175 °C and an MSL moisture sensitivity level of 1.
Vishay Siliconix 35-A DrMOS Solution Integrates MOSFETs and Driver ICs in Compact 6-mm Square Package for Voltage Regulators in CPU-Based Systems
Vishay Intertechnology has announced an integrated DrMOS solution providing high-side and low-side n-channel MOSFETs plus a full-featured MOSFET driver IC, all in a single PowerPAK MLF6x6 package. Available in two versions tailored for 3.3-V or 5-V controllers respectively, the new SiC769 is fully compliant with the DrMOS specification for voltage regulators (VRs) in servers and desktop computers, graphics boards, workstations, game consoles, and...
20 and 30V P-Channel TrenchFET Power MOSFETs from Vishay
Vishay Intertechnology has released new 20-V and 30-V p-channel TrenchFET power MOSFETs with a ±20-V gate source voltage that offer the industry’s lowest on-resistance for their device types in the SO-8 footprint.
20-V N-Channel Power MOSFET Plus Schottky Diode
Vishay Intertechnology has announced a 20-V n-channel power MOSFET plus Schottky diode. Featuring the 1.6-mm by 1.6-mm thermally enhanced PowerPAK SC-75 package, the SiB800EDK combines a Schottky diode with a low forward voltage of 0.32 V at 100 mA and a MOSFET with on-resistance ratings specified at gate drives down to 1.5 V.