Search results for "gallium nitride"

Nick Dowding, Applications Engineering Manager at The Barden Corporation (UK) Ltd, explains why magnetic bearings are proving a popular alternative to traditional mechanical systems and the challenges in protecting those systems.

Keithley Instruments, Inc. today introduced the Model 2657A High Power System SourceMeter instrument. The Model 2657A adds high voltage to the company’s Series 2600A System SourceMeter family of high speed, precision source measurement units.

Teseq has expanded its broadband amplifier line to include a new Class A model that operates from 10 kHz to 400 MHz with a saturated power level of 110 W. The CBA 400M-110 uses gallium arsenide (GaAs) integrated circuit technology to provide markedly better compression characteristics and increased efficiency than comparable silicon-based power amplifiers.

International Rectifier Corporation has announced the successful development of a gallium nitride (GaN)-based power device technology platform that can provide customers with improvements in key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology platforms to dramatically increase performance and cut energy consumption in end applications in a variety of market segments such a...

Electronic component distributor Digi-Key Corporation and Cree, Inc., a leader in wide bandgap transistors and radio frequency integrated circuits (RFICs), announced today that Cree’s silicon carbide (SiC) Metal-Semiconductor Field-Effect Transistors (MESFETs) are now in stock and ready for shipment.

Mitsubishi Electric is introducing three models of gallium nitride (GaN) high electron mobility transistors (HEMTs) with 10W, 20W and 40W output powers, for L to C band (0.5~ 6.0 GHz) amplifiers. The three devices are designed for use in base stations for mobile phones, very small aperture terminals and other transmission equipment.

Mitsubishi Electric introduces five new gallium arsenide (GaAs) power amplifiers which are mainly intended for use in PC data communication terminals for UMTS and LTE cellular networks at frequencies between 800 and 1980MHz.

National Semiconductor has introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. National’s new LM5113 is a highly-integrated, high-side and low-side GaN FET driver that reduces component count by 75 percent and shrinks printed circuit board (PCB) area by up to 85 percent compared to discrete driver de...

Agilent Technologies Inc today introduced enhancements to the B1505A Power Device Analyzer/Curve Tracer to make it the industry's first single-box solution able to characterize semiconductor devices up to 40 amps and 3000 volts.

At just 50 nanometres in length the ‘gate’ of the diamond transistor developed by Dr David Moran, of the Department of Electronics & Electrical Engineering, is more than 1000 times smaller than the thickness of a human hair, and is half the size of the previous smallest diamond transistor developed by Japanese firm NTT.