Search results for "gallium nitride"

National Semiconductor has introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. National’s new LM5113 is a highly-integrated, high-side and low-side GaN FET driver that reduces component count by 75 percent and shrinks printed circuit board (PCB) area by up to 85 percent compared to discrete driver de...

Agilent Technologies Inc today introduced enhancements to the B1505A Power Device Analyzer/Curve Tracer to make it the industry's first single-box solution able to characterize semiconductor devices up to 40 amps and 3000 volts.

At just 50 nanometres in length the ‘gate’ of the diamond transistor developed by Dr David Moran, of the Department of Electronics & Electrical Engineering, is more than 1000 times smaller than the thickness of a human hair, and is half the size of the previous smallest diamond transistor developed by Japanese firm NTT.

Six partners from the semiconductor and solar industries are joining forces in the NEULAND project funded by the Federal Ministry of Education and Research (BMBF) to explore new avenues for the efficient use of electricity from renewable sources. NEULAND stands for innovative power devices with high energy efficiency and cost effectiveness based on wide bandgap compound semiconductors. The project aims to reduce the losses in feeding electricit...

Cypress étend son portefeuille nvSRAM avec des versions à interface série I2C et SPI de deuxième génération de densité 64Kb à 1Mb Bénéficiant de la technologie SONOS 0.13µ utilisée pour les produits-phares PSoC, les nvSRAM de Cypress apportent une performance et une fiabilité améliorées aux applications industrielles, automobiles et de mesure

Cypress Semiconductor has introduced a new 1-Mbit Serial non-volatile Static Random Access Memory (nvSRAM) family and new 4-Mbit and 8-Mbit nvSRAMs with an integrated real-time clock (RTC). Cypress’s nvSRAMs are manufactured on its S8™ 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded non-volatile memory technology, enabling greater densities and improved access times and performance. nvSRAMs are ideal solutions for applicatio...

RF Micro Devices, Inc announced that RFMD has qualified and production released the RF3934, a 140-watt highly-efficient gallium nitride (GaN) RF unmatched power transistor (UPT) with superior performance versus competing GaAs and silicon power technologies.

Nujira and RF Micro Devices announced that they will be demonstrating an efficient broadband power amplifier (PA) design for 4G base stations at Mobile World Congress, Barcelona, February 2010. The design integrates the new RFMD RFG1M family of high performance gallium nitride (GaN) amplifiers with Nujira's Coolteq.h envelope tracking power modulators.

RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD® has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies.

The concept and use of diaphragm pumps is one of the oldest pumping techniques used by mankind. Due to their low initial cost, easy maintenance, simple installation and operation coupled with their ability to pump a wide range of fluids with varying viscosities, along with the seal-less, self-priming, dry running capabilities, its no surprise that the Air-Operated Diaphragm (AOD®) pump has become and remains one of the most popular, reliable and...