Search results for "gallium nitride"

Toshiba Electronics Europe has launched a new series of semiconductor photorelays that offers longer service life, lower power consumption and reduced board space requirements than mechanical alternatives for a wide variety of switching applications.

Ocean Optics has expanded its offering of small-footprint near-infrared spectrometers with the introduction of NIRQuest512-2.2, a high-performance unit with response from 900-2200 nm. NIRQuest512-2.2 is ideal for applications ranging from moisture detection and chemical analysis to high-resolution laser and optical fiber characterization.

EV Group today announced the EVG620HBL Gen II - the second generation fully automated mask alignment system for volume manufacturing of high-brightness light-emitting diodes (HB-LEDs). Introduced one year after the launch of the first-generation EVG620HBL, the Gen II delivers a tool platform tailored to address HB-LED customer-specific needs and the ongoing demand of total cost-of-ownership reduction. The EVG620HBL Gen II also optimizes tool foo...

Bridgelux Inc has shattered its previous industry record for highest Lumen per Watt values for Gallium Nitride on Silicon (GaN-on-Si). Using its proprietary buffer layer technology, the company has demonstrated growth of crack-free GaN layers on 8-inch silicon wafers, without bowing at room temperature, extending the company’s lead in driving the performance and manufacturability of GaN LEDs on silicon substrate.

Nick Dowding, Applications Engineering Manager at The Barden Corporation (UK) Ltd, explains why magnetic bearings are proving a popular alternative to traditional mechanical systems and the challenges in protecting those systems.

Keithley Instruments, Inc. today introduced the Model 2657A High Power System SourceMeter instrument. The Model 2657A adds high voltage to the company’s Series 2600A System SourceMeter family of high speed, precision source measurement units.

Teseq has expanded its broadband amplifier line to include a new Class A model that operates from 10 kHz to 400 MHz with a saturated power level of 110 W. The CBA 400M-110 uses gallium arsenide (GaAs) integrated circuit technology to provide markedly better compression characteristics and increased efficiency than comparable silicon-based power amplifiers.

International Rectifier Corporation has announced the successful development of a gallium nitride (GaN)-based power device technology platform that can provide customers with improvements in key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology platforms to dramatically increase performance and cut energy consumption in end applications in a variety of market segments such a...

Electronic component distributor Digi-Key Corporation and Cree, Inc., a leader in wide bandgap transistors and radio frequency integrated circuits (RFICs), announced today that Cree’s silicon carbide (SiC) Metal-Semiconductor Field-Effect Transistors (MESFETs) are now in stock and ready for shipment.

Mitsubishi Electric is introducing three models of gallium nitride (GaN) high electron mobility transistors (HEMTs) with 10W, 20W and 40W output powers, for L to C band (0.5~ 6.0 GHz) amplifiers. The three devices are designed for use in base stations for mobile phones, very small aperture terminals and other transmission equipment.