Search results for "gallium nitride"

Soitec announced today they are working together to develop engineered gallium nitride (GaN) substrates. The alliance will draw on Sumitomo Electric’s sophisticated GaN wafer manufacturing technology and Soitec’s unique Smart Cut™ layer transfer technology by which ultra-thin GaN layers are transferred from a single GaN wafer to produce multiple, engineered GaN substrates. The engineered substrates retain the original, high crystalline qual...

Solyndra LLC, the manufacturer of cylindrical photovoltaic (PV) systems for commercial rooftops and agricultural structures, today announced that Italian firm STC Engineering Srl has completed a 598 kWp greenhouse installation at the Azienda Agricola Zanchin, a market gardener growing flowers and vegetables for the domestic market. Solyndra´s PV panels are integrated within the 7,700 m² surface area of a standard, off-the-shelf tunnel greenhous...

Imec is working together with Flamac, a division of SIM vzw (Strategisch Initiatief Materialen in Vlaanderen or Strategic Initiative Materials in Flanders) to develop novel semiconductor materials for solar cell applications. Within this collaboration novel materials are screened as an alternative for the standard solar cells made of copper indium gallium and selenium (CIGS).

Having witnessed the tremendous growth of the solar industry in the past few years, along with all the dramatic events that went with it (consolidation, production capacity growth, efficiency increases, profit margins decreases, competition from thin film technologies, incentives established and withdrawn...), it's hard to map out what exactly can make a new entrant to the sector a successful photovoltaic company.

Avago Technologies has announced the latest addition to its family of low-cost, easy to use, high performance Gallium Arsenide (GaAs) low noise amplifier MMIC products for use in a wide range of wireless mobile communications applications. Avago’s new miniature MGA-21108, which measures 2.5 by 2.5 by 0.55mm in an 8-pin STSLP package, is a fully integrated GaAs LNA for use in the 1.5 to 8 GHz band.

Renesas Electronics announced the company’s first blue-violet semiconductor laser diode with a wavelength of 405 nm and a new structure incorporating an optical waveguide into the semiconductor device, which enables high power output and excellent suitability for mass production.

Toshiba Electronics Europe has launched a new series of semiconductor photorelays that offers longer service life, lower power consumption and reduced board space requirements than mechanical alternatives for a wide variety of switching applications.

Ocean Optics has expanded its offering of small-footprint near-infrared spectrometers with the introduction of NIRQuest512-2.2, a high-performance unit with response from 900-2200 nm. NIRQuest512-2.2 is ideal for applications ranging from moisture detection and chemical analysis to high-resolution laser and optical fiber characterization.

EV Group today announced the EVG620HBL Gen II - the second generation fully automated mask alignment system for volume manufacturing of high-brightness light-emitting diodes (HB-LEDs). Introduced one year after the launch of the first-generation EVG620HBL, the Gen II delivers a tool platform tailored to address HB-LED customer-specific needs and the ongoing demand of total cost-of-ownership reduction. The EVG620HBL Gen II also optimizes tool foo...

Bridgelux Inc has shattered its previous industry record for highest Lumen per Watt values for Gallium Nitride on Silicon (GaN-on-Si). Using its proprietary buffer layer technology, the company has demonstrated growth of crack-free GaN layers on 8-inch silicon wafers, without bowing at room temperature, extending the company’s lead in driving the performance and manufacturability of GaN LEDs on silicon substrate.