Search results for "gallium nitride"

Renesas Technology Europe today announced the release of a second selection of products in its wide RX Platform product line-up. The RX Platform is built around the new RX CPU and comprises the next generation of MCUs integrating the functions of Renesas Technology’s existing 16-bit and 32-bit MCU products.

Toshiba Electronics Europe has launched a new series of semiconductor photorelays that offers longer service life, lower power consumption and reduced board space requirements than mechanical alternatives for a wide variety of switching applications.

The new TLP3082 power triac photocoupler from Toshiba Electronics Europe features reinforced insulation and 5kV isolation voltage for AC safety applications. Specified with an off-state voltage of 800V, Toshiba’s TLP3082 consists of a zero-crossing (ZC) photo-triac optically coupled to a gallium arsenide (GaAs) infrared emitting diode. Maximum inhibit voltage for zero-crossing is just 20V, contributing to reduction of EMI emissions.

Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz, the highest level of performance yet reported at this frequency band. The main application of the new transistor will be in base stations for satellite microwave communications, which carry high-capacity signals, including high-defi...

Renesas Electronics has launched a new microcontroller in its SuperHTM range. The SH7239 device is an MCU designed for digital signal processing applications, such as servo controls, drives, solar panel inverters and general-purpose motor control.

Keithley Instruments has announced the availability of its Nanotechnology Measurement Handbook, a 124-page guide to electrical measurements for nanoscience applications. The handbook offers practical assistance in making precision low level DC and pulse measurements on nanomaterials and devices and provides an overview of the theoretical and practical considerations involved in measuring low currents, high resistances, low voltages, and low re...

RF Micro Devices, Inc. today announced the release of the RFHA1025, a highly-efficient 280-watt pulsed gallium nitride RF matched power transistor. The RFHA1025 delivers superior performance versus competing silicon power technologies.

This week at the 2011 IEEE MTT-S International Microwave Symposium, Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the TGI1314-25L, a gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT), the latest addition to its power amplifier product family.

TriQuint Semiconductor, Inc has announced several milestones related to its industry leading Gallium Nitride (GaN) developments. Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes GaN will play a key role.

AWR Corporation, the innovation leader in high-frequency electronic design automation (EDA), announced today the release and immediate availability of a new process design kit (PDK) supporting the Cree, Inc. high-power gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) foundry process. The new Cree/AWR PDK enables MMIC designers to model Cree’s GaN HEMT MMIC process within AWR&rsquo...