Search results for "Vishay"

Vishay today introduced a new 12-V p-channel TrenchFET Gen III power MOSFET with the industry’s lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-75, which features a 1.6-mm by 1.6-mm footprint area.

Vishay Intertechnology has released the first of its monolithic MOSFET and Schottky SkyFET products to use the company’s latest TrenchFET technology. Using TrenchFET Gen III silicon, the new Si4628DY delivers the lowest on-resistance ever for a device of its type in the SO-8 package, with a maximum rDS(on) of 3 milliohms at a 10-V gate drive and 3.8 milliohms at 4.5 V.

Vishay has unveiled a 20V p-channel TrenchFET Gen III power MOSFET with wha is siad to be the lowest on-resistance ever achieved in the PowerPAK 1212-8 type package. With a compact 3.3-mm by 3.3-mm footprint, the device saves space by offering one third the footprint area of the PowerPAK SO-8 or SO-8 type packages.

Vishay has released what it says is the industry's first TrenchFET power MOSFET in the chipscale MICRO FOOT package to feature backside insulation. The Si8422DB is optimized for power amplifier, battery, and load switching in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones. The 2-mil backside coating of the device insulates the top of the MICRO FOOT package to electrical shorts from being created by temp...

Vishay Intertechnology has unveiled the first device built on its new p-channel TrenchFET Gen III technology, a 20-V device with the lowest on-resistance ever achieved for a p-channel MOSFET with the footprint area of an SO-8.

Vishay Intertechnology introduced six new single- and dual-chip 80-V TMBS Trench MOS Barrier Schottky rectifiers in four power package options that feature a wide range of current ratings from 10 A to 30 A.

Vishay Intertechnology, Inc. today released two new devices in its industry-first family of power MOSFETs built on an enhanced process flow with strict manufacturing process controls for implantable medical applications.

Vishay Intertechnology, Inc. today released a new 600 V, 47 A n-channel power MOSFET with ultra-low maximum on-resistance of 0.07 Ω at a 10 V gate drive and an improved gate charge of 216 nC in the TO-247 package. The SiHG47N60S's 15.12 Ω-nC gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is the industry's lowest for this device type.

Vishay Intertechnology Inc today introduced new 30 V n-channel and 20 V p-channel TrenchFET power MOSFETs in the thermally enhanced Thin PowerPAK SC-70 package with an ultra-low 0.6 mm profile. The new SiA444DJT features the industry's lowest profile for an n-channel MOSFET in the 2 mm by 2 mm footprint area, while the SiA429DJT offers the industry's lowest on-resistance for a p-channel device with a sub-0.8 mm profile.

Vishay Intertechnology, Inc. today released the first devices in its next-generation D Series of high-voltage power MOSFETs. The new 400 V, 500V, and 600 V n-channel devices combine low specific on-resistance with ultra-low gate charge and currents from 3 A to 36 A in a wide range of packages.