Search results for "gallium nitride"

Black Sand Technologies, Inc., a fabless semiconductor company specializing in advanced power amplifier technology for wireless applications, today announced that it has produced what it says is the world's first 3G CMOS RF Power Amplifier (PA). Black Sand's proprietary CMOS PA architecture offers a breakthrough in combined performance, cost, battery life, and reliability for mobile devices such as mobile phones and datacards. The company also ...

RF Micro Devices, Inc. today announced availability of the RFPD2650, a new gallium nitride-based hybrid power doubler amplifier that delivers industry-best low distortion performance with the flexibility to optimize for supply current or energy consumption. The RFPD2650 hybrid power doubler amplifier module is specifically designed for CATV infrastructure applications including hybrid fiber coaxial (HFC) optical nodes.

RF Micro Devices has announced that it has qualified and released the RF3931, a 48-volt, 30-watt gallium nitride (GaN) unmatched transistor optimized for high power commercial and defense applications. The RF3931 is RFMD's first GaN product to achieve full product qualification, a process through which RF products are released by RFMD for mass production. Shipments of the RF3931 have commenced to multiple high power amplifier (HPA) manufacturers,...

RF Micro Devices announced today that it has been awarded a $1.5 million R&D contract by the Office of Naval Research (ONR) related to gallium nitride (GaN) microelectronics, including the development of materials, device fabrication and high power circuits.

RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the Company has further expanded its Foundry Services to deliver multiple molecular beam epitaxial (MBE) platforms, epitaxial characterization and epitaxial development structures, including specialty and high-volume, arsenic- and phosphorus-based processes.

RF Micro Devices, a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the Company has added its world-class Gallium Arsenide (GaAs) technology to RFMD’s foundry services portfolio and will begin providing a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers of its Foundry Services business unit.

RF Micro Devices today announced that RFMD has production released the RF3932, a 75-watt, highly efficient gallium nitride (GaN) RF unmatched power transistor (UPT) that delivers superior performance versus competing GaAs and silicon power technologies.

RF Micro Devices, Inc. today announced it has received its first purchase order from a tier-one wireless base station original equipment manufacturer (OEM) for a product featuring RFMD's state-of-the-art gallium nitride (GaN) process technology. The purchase order is for RFMD's RFG1M09180 180-watt GaN broadband power transistor (BPT) and is in support of the global expansion of 4G wireless networks.

Jena Tec has secured a long term contract with a customer in China for the supply of a high precision spindle used in an accurate CNC turning machine. The Asian customer will be producing highly accurate machine tools principally for export to Europe and North America and will utilise Jena Tec’s high performance spindle to satisfy the demanding requirements of small precision turned components.

Count On Tools Inc., introduces Universal Instruments’ GSM special low force (spring suspended) nozzle with replaceable tips for delicate components. Count On Tools’ new low force nozzles are ideal for gaas die, gallium arsenide, thin silicone (less than 0.10 in thickness), die with air bridges and flip chips.