Search results for "gallium nitride"
Renesas Electronics Announces New 32-Bit RX63T MCUs for Single Motor and Inverter Control Applications
Renesas Electronic today announced the release of the RX63T the latest member of the broad RX series of microcontrollers (MCUs). The RX63T features special inverter control timers and analog functions required for today’s inverter control applications. The new MCUs help to reduce system costs and power consumption in applications like air conditioners, washing machines, solar inverter solutions and lighting control.
RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier
RFMD’s new RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design.
RFG1M High-Power GaN Broadband Power Transistors
RFMD’s high-power GaN broadband power transistors (BPTs) are optimized for commercial infrastructure, military communications, and general purpose amplifier applications in the 700MHz to 2.2GHz frequency band. They are ideal for constant envelope, pulsed, WCDMA, and LTE applications.
RF Micro Devices announces formation of compound semiconductor group
RF Micro Devices, Inc. today announced a strategic initiative to extend RFMD’s industry leadership in compound semiconductor technologies into a broad array of adjacent non-RF growth markets. The strategic initiative includes the formation of a new business group, the Compound Semiconductor Group (CSG), which will operate alongside RFMD’s Cellular Products Group (CPG) and RFMD’s Multi-Market Products Group (MPG). RFMD forecasts the total av...
RF3928 GaN Wideband Pulsed Power Amplifier
The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance (ATCS), and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package.
RFHA1000 50MHz TO 1000MHz, 15W GaN Wideband Power Amplifier
RFMD’s RFHA1000 GaN Power IC (PIC) is a wideband power amplifier designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two-way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves high efficiency, flat gain and power over a large instantaneous bandwidt...
RFMD(R) Expands Product Offerings for Cellular Backhaul Market With Highly Integrated Point-to-Point Radio Chipsets
RF Micro Devices, Inc. has announced the expansion of its multi-market product portfolio to include several point-to-point (P2P) radio chipsets targeting the growing cellular backhaul market. The highly integrated radio chipsets combine multiple RF/microwave radio front end components and expand RFMD's product portfolio to encompass all critical RF and IF functions in the P2P radio transceiver.
Renesas Electronics Develops Industry’s First 40nm Embedded Flash Memory Technology IP for Automotive Real-Time Applications
Renesas Electronics has announced that it has developed the industry's first 40-nanometer (nm) memory intellectual property (IP) for automotive real-time applications. Renesas will also be the first to launch 40nm embedded flash microcontrollers (MCUs) for automotive applications using this 40nm flash technology with samples available by the beginning of autumn 2012.
Cypress Expands Serial nvSRAM Portfolio With New I2C And Second-Generation SPI Devices in Densities from 64kb to 1Mb
Cypress Semiconductor Corp. today introduced new serial non-volatile Static Random Access Memories (nvSRAMs) with I2C and SPI interfaces popular with metering, industrial and automotive applications. The new devices deliver operating frequencies up to 104MHZ for the SPI devices (3.4MHz for the I2C products) and are also offered with an optional integrated Real-Time Clock (RTC) that enables time-stamping of critical data to be backed-up.
Toshiba High-brightness, High Reliability White Surface Mount LEDs Provide Excellent Color Uniformity for Backlighting Applications
Marktech has expanded its lineup of Toshiba White surface mount LEDs aimed at general and backlighting applications with the release of the Toshiba TLWxK1109 series. The new 1109 series LEDs are offered in three Lighting Industry standard color temperatures of 3000K, 5000K and 6500K. As with all Toshiba products, the highest level of manufacturing processes are used to insure a very robust LED for use in all lighting applications.